FLC257MH-8 FUJITSU [Fujitsu Component Limited.], FLC257MH-8 Datasheet - Page 4

• Manufacturer Part Number: FLC257MH-8
• Description: C-Band Power GaAs FET
• Manufacturer: FUJITSU [Fujitsu Component Limited.]

FLC257MH-8
C-Band Power GaAs FET
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
2-ø1.8±0.15
(0.071)
Metal-Ceramic Hermetic Package
(0.020)
0.5
Case Style "MH"
10.0±0.3
3.5±0.3
(0.138)
6.7±0.2
(0.264)
(0.394)
1
3
2
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
4
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
1: Gate
2: Source (Flange)
3: Drain
Unit: mm (Inches)
2.8 Max
(0.110)
(0.004)
CAUTION
0.1
1.65±0.15
(0.065)