TC682 TELCOM [TelCom Semiconductor, Inc], TC682 Datasheet - Page 2

no-image

TC682

Manufacturer Part Number
TC682
Description
INVERTING VOLTAGE DOUBLER
Manufacturer
TELCOM [TelCom Semiconductor, Inc]
Datasheets

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC682COA
Manufacturer:
NS
Quantity:
6 218
Part Number:
TC682COA
Manufacturer:
MICROCHI
Quantity:
20 000
Part Number:
TC682COA713
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
TC682COA713
Manufacturer:
MICRO
Quantity:
20 000
Part Number:
TC682CPA
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
TC682EOA
Manufacturer:
TELCOM
Quantity:
9 672
Part Number:
TC682EOA
Manufacturer:
N/A
Quantity:
20 000
Part Number:
TC682EOA725
Manufacturer:
TELCOM
Quantity:
6 490
TC682
PIN DESCRIPTION
4-22
8-Pin DIP/SOIC Symbol Description
ABSOLUTE MAXIMUM RATINGS*
V
V
V
V
Power Dissipation (T
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
ELECTRICAL CHARACTERISTICS:
Symbol
V
I
R
F
P
V
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use
of any circuits described herein and makes no representations that they are free from patent infringement.
IN
OSC
IN
OUT
EFF
OUT
IN
IN
OUT
OUT
dV/dT ............................................................. 1V/ sec
Plastic DIP ........................................................... 730mW
SOIC ...............................................................470mW
.......................................................................... +5.8V
Pin No.
E
......................................................................– 11.6V
Short-Circuit Duration ............................ Continuous
FF
1
2
3
4
5
6
7
8
Parameter
Supply Voltage Range
Supply Current
V
Source Resistance
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
OUT
Source Resistance
V
GND
N/C
V
A
C
C
C
C
OUT
IN
1
+
2
2
+
1
70 C)
Input. Capacitor C1 negative
terminal.
Input. Capacitor C2 positive
terminal.
Input. Capacitor C2 negative
terminal
Output. Negative output voltage
(– 2V
Input. Device ground.
Input. Power supply voltage.
Input. Capacitor C1 positive
terminal
No Connection
IN
)
Test Conditions
R
R
R
I
I
I
R
V
L
L
L
OUT
L
L
L
L
= 10mA, T
= 10mA
= 5mA, V
= 2k
= , T
=
= 2k , T
Over Operating Temperature Range, V
unless otherwise indicated.
, R
L
A
=
= 25 C
IN
A
A
= 25 C
= 2.8V
= 25 C
*This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to Absolute Maximum Rating
Conditions for extended periods may affect device reliability.
(+5V)
GND
V IN
INVERTING VOLTAGE DOUBLER
C 1
C 2
+
+
7
1
2
3
Figure 1. TC682 Test Circuit
All Caps = 3.3 F
C 1 +
C 1 –
C 2 +
C 2 –
TELCOM SEMICONDUCTOR, INC.
GND
V
TC682
IN
IN
5
6
= +5V, test circuit Figure 1,
V OUT
Min
2.4
90
99
4
+
Typ
99.9
185
140
170
12
92
C
OUT
Max
300
400
180
230
320
5.5
R L
V OUT
Unit
V
kHz
%
%
A

Related parts for TC682