TPS816F_07 TOSHIBA [Toshiba Semiconductor], TPS816F_07 Datasheet - Page 2
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TPS816F_07
Manufacturer Part Number
TPS816F_07
Description
Silicon Epitaxial Planar
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TPS816F_07.pdf
(6 pages)
Absolute Maximum Ratings
Electrical and Optical Characteristics
Supply voltage
Output voltage
Output current (Ta = Topr)
LED output voltage
LED pulse forward current (Ta = Topr)
Operating temperature
Storage temperature
Soldering temperature (5s) (Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Solder under the lead stopper.
Supply voltage
Supply current
Output
LED output
Peak sensitivity wavelength
Propagation
characteristics
Permissible luminosity
Note 2: The signal light source is an infrared LED with λp = 940 mm.
Note 3: The LED output waveform measurement circuit and waveform are as follows:
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TPS816(F)
Characteristics
High-level output
voltage
Low-level output
voltage
Low-level output
voltage
Pulse cycle
Pulse width
Duty ratio
H → L threshold
radiant incidence
L → H threshold
radiant incidence
Hysteresis
Propagation delay
time (L → H)
Propagation delay
time (H → L)
LED
V
OUT
GND
OUT
CC
4
1
3
2
(Ta = 25°C)
Symbol
V
V
I
V
I
T
T
T
OUT
LED
OUT
LED
CC
opr
stg
sol
E
Symbol
T
LH
V
V
V
t
t
V
W
E
E
I
T
pLH
pHL
T
E
λ
CC
LED
OH
+5 V
V
CC
OL
HL
LH
W
/E
/T
C
p
X
LED
HL
C
(V
−40~100
V
E = 0
I
I
No visible light
E = 2 μW/nm
−30~85
Rating
OL
LED
< = V
< = V
CC
OUT
260
16
70
2
= 16 mA, E = 2 μW/nm
7
CC
CC
V
GND
= 70 mA (peak)
= 5 V, Ta = 25°C)
, V
LED
LED
Test Condition
left open
2
Unit
T
mA
mA
⎯
⎯
⎯
⎯
°C
°C
°C
V
V
V
W
T
(Note 2, 5)
C
(Note 2)
2
(Note 3)
(Note 3)
(Note 2)
(Note 4)
+5 V
3000
1.05
0.45
Min
4.5
4.9
⎯
⎯
64
⎯
⎯
⎯
⎯
⎯
⎯
4
Typ.
0.15
1.35
0.65
130
900
400
400
0.6
0.4
⎯
5
4
5
8
6
TPS816(F)
2007-10-01
1.65
13.7
Max
220
670
670
5.5
0.4
1.0
0.8
0.8
10
⎯
⎯
⎯
7
mm
μW/
Unit
mA
nm
μs
μs
⎯
μs
%
lx
V
V
V
V
2