TC660 TELCOM [TelCom Semiconductor, Inc], TC660 Datasheet - Page 2

• Manufacturer Part Number: TC660
• Description: 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
• Manufacturer: TELCOM [TelCom Semiconductor, Inc]

TC660
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... +6V
LV, FC, OSC Input
Voltage (Note 1) ....................... V
Current Into LV (Note 1) ...................... 20 A for V
Output Short Duration (V
Power Dissipation (Note 2) (T
Operating Temperature Range
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
4-6
ELECTRICAL CHARACTERISTICS:
Symbol
I
V
R
I
F
I
P
V
NOTES: 1. Connecting any input terminal to voltages greater than V
+
OUT
OSC
OSC
+
OUT
EFF
OUT
SOIC ............................................................... 470mW
Plastic DIP ......................................................730mW
C Suffix .................................................. 0 C to +70 C
E Suffix ............................................. – 40 C to +85 C
E
FF
2. Derate linearly above 50 C by 5.5 mW/ C.
3. To prevent damaging the device, do not short V
4. To maximize output voltage and efficiency performance, use low ESR capacitors for C
inputs from sources operating from external supplies be applied prior to "power up" of the TC660.
Parameter
Supply Current
Supply Voltage Range
Output Source Resistance
Output Current
Oscillator Frequency
Input Current
Power Efficiency (Note 4)
Voltage Conversion Efficiency
SUPPLY
A
OUT
70 C)
5.5V) (Note 3) .. 10 Sec
– 0.3V to (V
Specifications Measured Over Operating Temperature Range With,
V
(Figure 1), unless otherwise indicated.
Test Conditions
R
FC pin = OPEN or GND
FC pin = V
LV = HIGH, R
LV = GND, R
LV = OUT, R
I
V
Pin 7 open; Pin 1 open or GND
Pin 1 = V
Pin 1 open
Pin 1 = V
R
R
I
R
OUT
L
OUT
L
L
L
L
+
= 100mA to GND
+
=
= 1 k connected between V
= 500 connected between V
=
OUT
+
= 5V, C
= 100mA
+0.3V)
>3.5V
< – 4V
to V
+
+
+
+
+
.
or less than GND may cause destructive latch-up. It is recommended that no
L
L
L
OSC
= 1 k (Figure 9)
= 1 k
= 1 k
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
= Open, C1, C2 = 150 F, FC = Open, Test Circuit
100mA CHARGE PUMP DC-TO-DC
+
OUT
& V
& GND
1
OUT
and C
TELCOM SEMICONDUCTOR, INC.
VOLTAGE CONVERTER
2
.
Min
100
1.5
2.5
—
96
92
99
—
—
—
—
—
—
—
3
Typ
+ 1.1
99.9
200
6.5
10
90
+ 5
98
96
88
—
—
—
—
1
Max
500
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
3
Unit
mA
V
mA
kHz
%
%
A
A