TSC4505CTA3 TSC [Taiwan Semiconductor Company, Ltd], TSC4505CTA3 Datasheet
TSC4505CTA3
Manufacturer Part Number
TSC4505CTA3
Description
High Voltage NPN Transistor
Manufacturer
TSC [Taiwan Semiconductor Company, Ltd]
Datasheet
1.TSC4505CTA3.pdf
(5 pages)
Absolute Maximum Rating
Note: 1. Single pulse, Pw=20ms, Duty≤50%
Electrical Specifications
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Features
●
●
Structure
●
●
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Reverse Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SOT-23
Low V
Complementary part with TSA1759
Epitaxial Planar Type
NPN Silicon Transistor
CE(SAT)
Pin Definition:
1. Base
2. Emitter
3. Collector
0.15V @ I
C
/ I
B
(Ta = 25
= 10mA / 10mA (Typ.)
TO-92
(Ta = 25
o
C unless otherwise noted)
I
I
I
V
V
V
I
I
V
V
f=10MHz
V
C
C
E
C
C
CB
CE
EB
CE
CE
CB
o
= 50uA, I
= 1mA, I
= 50uA, I
/ I
/ I
Pin Definition:
1. Emitter
2. Base
3. Collector
C unless otherwise noted)
= 6V, I
= 400V, I
= 300V, R
= 10V, I
=10V, I
= 10V, I
B
B
= 10mA / 1mA
= 10mA / 1mA
Conditions
SOT-23
B
C
TO-92
E
C
C
C
E
= 0
= 0
=-10mA,
= 0
= 0
E
= 10mA
= 0, f=1MHz
EB
= 0
1/5
= 4kΩ
PRODUCT SUMMARY
Ordering Information
TSC4505CX RF
TSC4505CT B0
TSC4505CT A3
Part No.
V
Symbol
BV
BV
CE(SAT)
V
V
V
T
I
P
Symbol
C
T
CEO
CBO
CBO
CEO
EBO
I
STG
V
V
C
BV
BV
D
BV
J
High Voltage NPN Transistor
CE(SAT)
BE(SAT)
Cob
I
I
I
h
CBO
CER
EBO
f
FE
CBO
CEO
EBO
T
400V
400V
300mA
0.1V @ I
Min
400
400
100
Package
--
--
--
--
--
--
--
SOT-23
6
TO-92
TO-92
- 55 to +150
Limit
0.225
+150
C
400
400
300
0.6
6
/ I
Typ
0.1
20
B
--
--
--
--
--
--
--
--
7
= 10mA / 1mA
TSC4505
3Kpcs / 7” Reel
2Kpcs / Ammo
1Kpcs / Bulk
Max
Packing
270
0.5
1.5
10
20
10
--
--
--
--
--
Version: A07
Unit
mA
o
o
W
V
V
V
C
C
Unit
MHz
uA
nA
uA
pF
V
V
V
V
V
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TSC4505CTA3 Summary of contents
Page 1
SOT-23 TO-92 Pin Definition: 1. Base 2. Emitter 3. Collector Features ● Low V 0.15V @ 10mA / 10mA (Typ.) CE(SAT ● Complementary part with TSA1759 Structure ● Epitaxial Planar Type NPN Silicon Transistor ...
Page 2
Electrical Characteristics Curve Figure 1. DC Current Gain Figure 3. V BE(SAT unless otherwise noted) v.s. Ic 2/5 TSC4505 High Voltage NPN Transistor Figure 2. V v.s. Ic CE(SAT) Figure 4. Power Derating Curve Version: ...
Page 3
SOT-23 Mechanical Drawing DIM 3/5 TSC4505 High Voltage NPN Transistor SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 1.40 ...
Page 4
TO-92 Mechanical Drawing DIM 4/5 TSC4505 High Voltage NPN Transistor TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN 4.30 4.70 0.169 4.30 4.70 0.169 14.30(typ) 0.563(typ) 0.43 0.49 0.017 2.19 2.81 0.086 3.30 ...
Page 5
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...