EL7562CU-T13 INTERSIL [Intersil Corporation], EL7562CU-T13 Datasheet - Page 2

• Manufacturer Part Number: EL7562CU-T13
• Description: Monolithic 2Amp DC-DC Step-Down Regulator
• Manufacturer: INTERSIL [Intersil Corporation]

Absolute Maximum Ratings
Supply Voltage between V
V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V
V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
DC Electrical Specifications
NOTE: V
V
V
V
V
I
I
I
I
V
V
T
T
I
I
R
R
V
V
V
V
I
V
V
I
LX
HI
OSC_CHG
OSC_DIS
VDD
VDD_OFF
LEAK
LMAX
FB
EN
PARAMETER
OT
HYS
REF
REFTC
REFLOAD
RAMP
DD_OFF
DD_ON
DSON
DSONTC
FB
FB_LINE
FB_LOAD
FB_TC
EN_HI
EN_LO
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
+V
DRV
EN_HI
is typically 2/3 of V
Reference Accuracy
Reference Temperature Coefficient
Reference Load Regulation
Oscillator Ramp Amplitude
Oscillator Charge Current
Oscillator Discharge Current
V
V
V
V
Over-temperature Threshold
Over-temperature Hysteresis
Internal FET Leakage Current
Peak Current Limit
FET On Resistance
R
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
Enable Pull Up Current
DD
DD
DD
DD
DSON
+V
Standby Current
for Shutdown
for Startup
DRV
IN
Tempco
or V
Supply Current
DESCRIPTION
DD
2
DD
and GND . . . . . . . . . . . . +6.5V
(T
. For V
A
V
= 25°C)
DD
DD
= V
= 3.3V, V
IN
= 5V, T
EN_HI
J
DD
A
= T
IN
LX
= T
0 < I
0.1V < V
0.1V < V
V
EN = 0
EN = 0, L
FET)
Wafer level test only
I
V
0.1A < I
-40°C < T
V
(Note)
V
+0.3V
+0.3V
C
LOAD
EN
IN
FB
EN
+6V
= T
is 2.2V typical.
J
= 5V, ∆V
= 25°C, C
REF
= 0V
= 4V, F
= 0
A
= 0A
LOAD
OSC
OSC
< 50µA
X
A
= 5V (low FET), L
< 85°C, I
OSC
IN
< 1.25V
< 1.25V
< 1A
OSC
CONDITIONS
= 10%, I
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Ambient Temperature . . . . . . . . . . . . . . . . . 0°C to +70°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C
= 120kHz
= 270pF, unless otherwise specified.
LOAD
LOAD
= 0.5A
X
= 0A
= 0V (high
0.970
1.24
MIN
2.5
2.6
-1
-4
2
3
4
0.985
1.26
1.15
TYP
200
135
100
-2.5
0.2
0.5
0.5
50
20
60
±1
8
1
1.000
MAX
1.28
120
200
6.5
1.5
2.7
20
3
1
ppm/°C
mΩ/°C
UNIT
mΩ
mA
mA
mA
µA
°C
°C
µA
nA
µA
%
%
%
%
V
V
V
V
V
A
V
V