EL7551CU ELANTEC [Elantec Semiconductor], EL7551CU Datasheet - Page 2

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EL7551CU

Manufacturer Part Number
EL7551CU
Description
Monolithic 1 Amp DC:DC Step-down Regulator
Manufacturer
ELANTEC [Elantec Semiconductor]
Datasheets

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Part Number
Manufacturer
Quantity
Price
Part Number:
EL7551CU
Manufacturer:
INTERSIL
Quantity:
20 000
EL7551C - Preliminary
Monolithic 1 Amp DC:DC Step-down Regulator
Absolute Maximum Ratings
Supply Voltage between V
V
Input Voltage
V
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
DC Characteristics
V
Closed Loop AC Electrical Characteristics
V
V
V
V
V
I
I
I
I
V
V
T
T
I
I
R
R
V
V
V
V
I
V
V
I
F
t
M
t
t
D
LX
HI
DD
S
SYNC
BRM
LEB
OSC_CHG
OSC_DIS
VDD
VDD_OFF
LEAK
LMAX
FB
EN
Parameter
OT
HYS
OSC
DSON
DSONTC
REF
REFTC
REFLOAD
RAMP
DD_OFF
DD_ON
FB
FB_LINE
FB_LOAD
FB_TC
EN_HI
EN_LO
Parameter
MAX
= V
SS
Voltage
Voltage
= V
+V
IN
IN
DRV
= 5V, T
= 5V, T
Reference Accuracy
Reference Temperature Coefficient
Reference Load Regulation
Oscillator Ramp Amplitude
Oscillator Charge Current
Oscillator Discharge Current
V
V
V
V
Over Temperature Threshold
Over Temperature Hysteresis
Internal FET Leakage Current
Peak Current Limit
FET On Resistance
R
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
Enable Pull Up Current
A
DSON
Oscillator Initial Accuracy
Minimum Oscillator Sync Width
Soft Start Slope
FET Break Before Make Delay
High Side FET Minimum On Time
Maximum Duty Cycle
DD
DD
DD
DD
A
= T
+V
= T
Standby Current
for Shutdown
for Startup
J
Tempco
DRV
= 25°C, C
J
IN
= 25
Supply Current
or V
°
C, C
Description
DD
OSC
Description
OSC
and GND
= 1.2nF, unless otherwise specified.
= 1.2nF, unless otherwise specified.
GND -0.3V, V
GND -0.3V, V
(T
A
J
= 25°C)
= T
0 < I
0.1V < V
0.1V < V
V
EN = 0
EN = 0, L
Wafer level test only
I
V
0.1A < I
-40°C < T
V
V
LOAD
C
EN
IN
FB
EN
= T
V
DD
= 5V, V
REF
= 0V
= 4V, F
= 0
IN
A
LX
= 0A
+6.5V
+0.3V
+0.3V
.
LOAD
< 50µA
OSC
OSC
+6V
X
A
= 5V (low FET), L
< 85°C, I
OSC
< 1.25V
< 1.25V
IN
< 1A
= 10%, I
= 120kHz
2
Conditions
Storage Temperature
Operating Ambient Temperature
Operating Junction Temperature
LOAD
Conditions
LOAD
= 0.5A
X
= 0A
= 0V (high FET)
0.960
Min
1.24
3.95
Min
105
3.5
-1
-4
2
1
0.975
Typ
1.26
1.15
Typ
-2.5
200
135
100
117
150
3.5
0.2
0.5
0.5
3.2
0.5
±1
50
20
45
25
15
95
8
1
Max
Max
1.28
4.45
0.99
200
130
1.5
10
95
5
4
4
-65°C to +150°C
-40°C to +85°C
ppm/°C
m /°C
V/ms
Unit
Unit
kHz
mA
mA
mA
m
+135°C
µA
µA
µA
nA
°C
°C
%
%
%
%
ns
ns
ns
%
V
V
V
V
A
V
V
V

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