STM8S105C4B3 STMICROELECTRONICS [STMicroelectronics], STM8S105C4B3 Datasheet - Page 82

• Manufacturer Part Number: STM8S105C4B3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
10.3.6
82/127
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Symbol
t
N
t
I
(1)
(2)
even when a write/erase operation addresses a single byte.
V
erase
RET
DD
IL
RW
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Parameter
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
memory)
Erase/write cycles(data memory)
Data retention (program memory)
after 10k erase/write cycles at T
= +85 °C
Data retention (data memory) after
10k erase/write cycles at T
°C
Data retention (data memory) after
300 k erase/write cyclesat T
+125 °C
Supply current (Flash
programming or erasing for 1 to
128 bytes)
Input low level
voltage
Table 38: I/O static characteristics
(2)
Conditions
V
(program
DocID14771 Rev 9
DD
= 5 V
A
= +85
A
=
(2)
A
DD
Conditions
T
T
T
T
T
A
A
RET
RET
RET
and T
= +85 °C
= +125 ° C
= 55° C
= 55° C
= 85° C
A
unless otherwise specified. All unused
Min
-0.3
Typ
Min
10 k
300 k
20
20
1
(1)
Typ
3
3
1M
2
Max
0.3 x V
Max
3.3
3.3
STM8S105xx
DD
Unit
Unit
V
ms
ms
cycles
years
mA