MCP1630EMS MICROCHIP [Microchip Technology], MCP1630EMS Datasheet - Page 5

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MCP1630EMS

Manufacturer Part Number
MCP1630EMS
Description
High-Speed, Microcontroller-Adaptable, Pulse Width Modulator
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
DC CHARACTERISTICS (CONTINUED)
TEMPERATURE SPECIFICATIONS
 2004 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, V
V
Current Sense Input
Maximum Current Sense Signal
Delay From CS to V
Minimum Duty Cycle
Current Sense Input Bias Current
Internal Driver
R
R
V
V
Protection Features
Under Voltage Lockout
Under Voltage Lockout
Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
Electrical Specifications:
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Junction Temperature
Thermal Package Resistances
Thermal Resistance, MSOP8
IN
EXT
EXT
DSON
DSON
for typical values = 5.0V, T
Rise Time
Fall Time
2:
3:
P-channel
N-channel
Parameters
Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
External oscillator input (OSC IN) rise and fall times between 10 ns and 10 µs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.
The reference input of the internal amplifier is capable of rail-to-rail operation.
Parameters
EXT
A
V
= -40°C to +125°C.
IN
= 3.0V to 5.5V, F
UVLO
T
T
V
R
R
SHD_HYS
CS_VEXT
DC
UVLO
CS_MAX
T
T
I
DSon_P
DSon_N
T
Sym
CS_B
RISE
FALL
SHD
MIN
_HYS
Sym
T
T
T
JA
A
A
J
OSC
0.85
Min
2.7
50
IN
= 3.0V to 5.5V, F
= 1 MHz with 10% Duty Cycle, C
Min
-40
-65
-0.1
Typ
150
0.9
5.9
6.2
12
10
75
18
7
Typ
208
OSC
Max
0.95
150
3.0
25
30
30
18
18
0
+125
+150
+150
Max
= 1 MHz with 10% Duty Cycle, C
Units
Units
°C/W Typical 4-layer board
mV
µA
°C
°C
ns
ns
ns
%
°C
°C
°C
V
V
IN
= 0.1 µF. T
Set by maximum error amplifier
clamp voltage, divided by 3.
V
V
V
C
Typical for V
C
Typical for V
V
UVLO
Steady state
Transient
FB
CS
IN
IN
L
L
= 100 pF
= 100 pF
= 5V
falling, V
= V
= GND
REF
A
= -40°C to +125°C.
MCP1630
Conditions
+ 0.1V,
IN
IN
EXT
Conditions
= 3V
= 3V
IN
low state when in
= 0.1 µF,
DS21896A-page 5

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