BCR5AS-12B-T13 RENESAS [Renesas Technology Corp], BCR5AS-12B-T13 Datasheet - Page 5

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BCR5AS-12B-T13

Manufacturer Part Number
BCR5AS-12B-T13
Description
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
BCR5AS-12B (The product guaranteed maximum junction temperature of 150 C)
REJ03G0451-0300
Page 5 of 7
160
140
120
100
160
140
120
100
10
10
Rate of Rise of Off-State Voltage (Tj=150°C)
80
60
40
20
80
60
40
20
Commutation Characteristics (Tj=150°C)
Rate of Rise of Off-State Voltage (V/µs)
0
0
7
5
3
2
7
5
3
2
7
10
1
0
60
10
Main Voltage
Main Current
1
0
40
Commutating Current (A/ms)
2 3
Junction Temperature (°C)
I Quadrant
Rate of Decay of On-State
2 3
Rev.3.00
20
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
5 7 10
(dv/dt)c
I
T
0
III Quadrant
I Quadrant
τ
20
5 7 10
2
Time
Time
2 3 5 7 10
40
(di/dt)c
Nov 30, 2007
V
60
1
D
Minimum
Characteristics
Value
Typical Example
Typical Example
Tj = 150°C
III Quadrant
80
Typical Example
Tj = 150°C
I
τ = 500µs
V
f = 3Hz
T
2 3
D
= 4A
100
= 200V
3
2 3 5 7 10
120
5 7
140
160
10
4
2
160
140
120
100
10
10
10
10
10
Rate of Rise of Off-State Voltage (Tj=125°C)
80
60
40
20
Commutation Characteristics (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
0
7
5
3
2
7
5
3
2
7
7
5
4
3
2
7
5
4
3
2
10
1
0
3
2
1
10
10
Main Voltage
Main Current
1
0
0
I
RGT I
Minimum
Characteristics
Value
Gate Current Pulse Width (µs)
I
2 3
Commutating Current (A/ms)
FGT I
Rate of Decay of On-State
2
2 3
Gate Current Pulse Width
Gate Trigger Current vs.
Breakover Voltage vs.
5 7 10
3
(dv/dt)c
I
I
T
RGT III
4
I Quadrant
τ
5 7 10
5 7 10
2
III Quadrant
Time
Time
2 3 5 7 10
(di/dt)c
V
1
1
D
Typical Example
Tj = 125°C
Typical Example
Typical Example
Tj = 125°C
I
τ = 500µs
V
f = 3Hz
T
III Quadrant
2 3
2 3 4
D
= 4A
I Quadrant
= 200V
3
2 3 5 7 10
5 7 10
5 7
10
2
4
2

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