STM8456 SAMHOP [SamHop Microelectronics Corp.], STM8456 Datasheet - Page 2

• Manufacturer Part Number: STM8456
• Description: Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

4
STM8456
N-Channel ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
R
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
Q
Q
Q
V
I
I
ON CHARACTERISTICS
V
g
t
t r
t
t f
DRAIN-SOURCE DIODE CHARACTERISTICS
DSS
GSS
D(ON)
D(OFF)
FS
DS(ON)
ISS
OSS
RSS
SD
GS(th)
g
gs
gd
DSS
Drain-Source Breakdown Voltage
Parameter
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
a
b
c
c
Conditions
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
V
V
f=1.0MHz
D
GS
DS
GS
GS
GS
DS
DS
DS
DD
GS
DS
DS
GS
GS
GEN
DS
=1A
=0V , I
=32V , V
=10V , I
=4.5V , I
=V
=10V , I
=20V,V
=20V
=10V
=20V,I
=20V,I
=20V,I
=10V
=0V,I
= ±20V , V
=3.3 ohm
GS
2
S
, I
D
=1.3A
D
D
D
( T
=250uA
D
GS
=6.2A,V
=6.2A,
D
=5.3A,V
D
GS
D
=250uA
=6.2A
=6.2A
A
=5.3A
=0V
=0V
DS
=25 ° C unless otherwise noted )
=0V
GS
GS
=10V
=4.5V
Min
40
1
www.samhop.com.tw
10.2
17.3
11.3
13.8
Typ
580
0.79
1.5
1.2
5.8
2.9
26
82
50
11
20
33
±100
Max
1.2
33
45
1
3
May,29,2008
Ver 1.0
m ohm
m ohm
Units
uA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
V
S
V