STM8360T SAMHOP [SamHop Microelectronics Corp.], STM8360T Datasheet - Page 4

• Manufacturer Part Number: STM8360T
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

STM8360T
N-Channel
Figure 3. On-Resistance vs. Drain Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
16
32
24
72
60
48
36
24
12
40
8
0
0
Figure 5. Gate Threshold Variation
-50 -25
Figure 1. Output Characteristics
0
1
V
V
G S
G S
V
Tj, Junction Temperature( ° C )
and Gate Voltage
=4.5V
DS
=10V
0.5
, Drain-to-Source Voltage(V)
8
with Temperature
0
I
D
, Drain Current(A)
1
25
16
V
V
G S
G S
1.5
50
=4.5V
=10V
V
V
V
24
75 100 125 150
G S
G S
G S
=3.5V
=3V
=2.5V
2
I
V
D
DS
=250uA
=V
32
V
2.5
G S
G S
=4V
40
3
4
Figure 4. On-Resistance Variation with Drain
Figure 6. Breakdown Voltage Variation
0.90
0.85
0.95
1.10
1.05
1.00
1.15
20
16
12
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Figure 2. Transfer Characteristics
8
4
0
-50 -25
0
0
Current and Temperature
I
V
Tj, Junction Temperature( ° C )
D
Tj, Junction Temperature( ° C )
with Temperature
GS
0.8
=250uA
25
, Gate-to-Source Voltage(V)
0
T j =125 C
25
1.6
V
50
I
25 50
G S
D
=5.3A
=4.5V
2.4
75
75 100 125 150
100
3.2
V
I
www.samhop.com.tw
D
G S
-55 C
=6.6A
=10V
125
4.0
T j ( ° C )
4.8
150
Nov,21,2008
Ver 1.0