STM8303 SAMHOP [SamHop Microelectronics Corp.], STM8303 Datasheet - Page 4

• Manufacturer Part Number: STM8303
• Description: Dual E nhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

S T M8303
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300μs, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
* R
* R
JA
JA
is 62.5 C/W when mounted on 1in FR-4 board with 2oz Copper
is 125 C/W when mounted on 0.02 in FR-4 board with 2oz Copper
Parameter
1200
1000
800
600
400
200
20
16
12
8
4
0
0
0
0
Figure 1. Output Characteristics
Crss
V
V
1
DS
DS
V
5
Figure 3. Capacitance
＜
GS
, Drain-to-Source Voltage (V)
, Drain-to Source Voltage (V)
=10,8,5V
2
10
＜
15
3
20
4
2
A
＜
2
=25 C unless otherwise noted)
Symbol
V
V
GS
GS
Ciss
5
25
V
=4V
=3V
SD
Coss
b
30
6
4
V
V
GS
GS
= 0V, Is =1.7A
= 0V, Is =-1.7A
Condition
2.2
1.8
1.4
1.0
0.8
0.4
25
20
15
10
Figure 4. On-Resistance Variation with
0
5
0
-50
0
Figure 2. Transfer Characteristics
-25
V
T j, J unction T emperature ( C )
Drain Current and Temperature
G S
0.8
I
D
V
=6A
=10V
GS
0
, Gate-to-Source Voltage (V)
Tj=125 C
1.6
N-Ch
P-Ch
25
50
2.4
Min Typ Max Unit
25 C
75
3.2
100
-55 C
-0.78
0.8
4.0
125
Tj=( C )
C
150
4.8
-1.2
1.2
V
5