X28HC256D-12 XICOR [Xicor Inc.], X28HC256D-12 Datasheet - Page 9

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X28HC256D-12

Manufacturer Part Number
X28HC256D-12
Description
5 Volt, Byte Alterable E2PROM
Manufacturer
XICOR [Xicor Inc.]
Datasheet
X28HC256
SYSTEM CONSIDERATIONS
Because the X28HC256 is frequently used in large
memory arrays it is provided with a two line control
architecture for both read and write operations. Proper
usage can provide the lowest possible power dissipation
and eliminate the possibility of contention where mul-
tiple I/O pins share the same bus.
To gain the most benefit it is recommended that CE be
decoded from the address bus and be used as the
primary device selection input. Both OE and WE would
then be common among all devices in the array. For a
read operation this assures that all deselected devices
are in their standby mode and that only the selected
device(s) is outputting data on the bus.
Because the X28HC256 has two power modes, standby
and active, proper decoupling of the memory array is of
9
prime concern. Enabling CE will cause transient current
spikes. The magnitude of these spikes is dependent on
the output capacitive loading of the l/Os. Therefore, the
larger the array sharing a common bus, the larger the
transient spikes. The voltage peaks associated with the
current transients can be suppressed by the proper
selection and placement of decoupling capacitors. As a
minimum, it is recommended that a 0.1 F high fre-
quency ceramic capacitor be used between V
V
the value of the capacitor may have to be larger.
In addition, it is recommended that a 4.7 F electrolytic
bulk capacitor be placed between V
eight devices employed in the array. This bulk capacitor
is employed to overcome the voltage droop caused by
the inductive effects of the PC board traces.
SS
at each device. Depending on the size of the array,
CC
and V
SS
for each
CC
and

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