M27C4001-10B1X STMICROELECTRONICS [STMicroelectronics], M27C4001-10B1X Datasheet - Page 5

• Manufacturer Part Number: M27C4001-10B1X
• Description: 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 7. Read Mode DC Characteristics
(T
Note: 1. V
Table 8A. Read Mode AC Characteristics
(T
Note: 1. V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
t
t
Symbol
Symbol
A
A
GHQZ
EHQZ
will not occur.
V
t
t
t
t
GLQV
AXQX
I
I
V
AVQV
ELQV
= 0 to 70 °C or –40 to 85 °C; V
V
= 0 to 70 °C or –40 to 85 °C; V
I
I
I
V
IH
CC1
CC2
I
CC
LO
PP
2. Maximum DC voltage on Output is V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
OH
OL
LI
IL
(2)
(2)
(2)
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
t
ACC
t
t
t
Alt
t
t
CE
OE
DF
DF
OH
Address Valid to
Output Valid
Chip Enable Low to
Output Valid
Output Enable Low to
Output Valid
Chip Enable High to
Output Hi-Z
Output Enable High to
Output Hi-Z
Address Transition to
Output Transition
Parameter
Parameter
CC
CC
CC
+0.5V.
= 5V ± 5% or 5V ± 10%; V
= 5V ± 5% or 5V ± 10%; V
Test Condition
E = V
E = V
(1)
(1)
G = V
G = V
E = V
E = V
PP
PP
IL
IL
, G = V
, G = V
I
and removed simultaneously or after V
and removed simultaneously or after V
OUT
0V
IL
IL
IL
IL
E = V
Test Condition
0V
E > V
I
I
OH
OH
I
= 0mA, f = 5MHz
OL
V
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
IL
IL
PP
E = V
V
= –400 A
= –100 A
IL
= 2.1mA
V
CC
OUT
, G = V
IN
= V
Min
– 0.2V
IH
0
0
0
CC
V
-35
V
CC
CC
IL
PP
PP
(3)
,
Max
35
35
20
30
30
= V
= V
CC
CC
Min
M27C4001
)
)
0
0
0
V
-45
CC
–0.3
Min
2.4
PP
PP
(3)
– 0.7V
2
Max
45
45
25
30
30
.
Min
0
0
0
V
-55
CC
Max
±10
±10
100
0.8
0.4
30
10
1
(3)
M27C4001
+ 1
Max
55
55
30
30
30
Unit
mA
mA
Unit
V
V
V
V
V
ns
ns
ns
ns
ns
ns
A
A
A
A
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