AT28LV010-20PC ATMEL [ATMEL Corporation], AT28LV010-20PC Datasheet - Page 2

• Manufacturer Part Number: AT28LV010-20PC
• Description: 1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
• Manufacturer: ATMEL [ATMEL Corporation]

Description (Continued)
The AT28LV010 is accessed like a Static RAM for the
read or write cycle without the need for external compo-
nents. The device contains a 128-byte page register to al-
low writing of up to 128-bytes simultaneously. During a
write cycle, the address and 1 to 128-bytes of data are
internally latched, freeing the address and data bus for
other operations. Following the initiation of a write cycle,
the device will automatically write the latched data using
an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write
cycle has been detected a new access for a read or write
can begin.
Absolute Maximum Ratings*
Block Diagram
2-156
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
AT28LV010
CC
+ 0.6V
Atmel’s 28LV010 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved
data retention characteristics. Software data protection is
implemented to guard against inadvertent writes. The de-
vice also includes an extra 128-bytes of E
vice identification or tracking.
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
2
PROM for de-