TPS610F TOSHIBA [Toshiba Semiconductor], TPS610F Datasheet - Page 4

• Manufacturer Part Number: TPS610F
• Description: Silicon NPN Epitaxial Planar
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Radiation Angle
90°
80°
70°
1.0
200
100
60°
50
30
10
0.02
5
3
1
50°
0.8
t
t
t
t
d
d
f
r
Ta=25°C
(R
(R
(R
(R
Relative sensitivity
40°
Input
L
L
TLN110(F)
L
L
Directional Sensitivity Characteristic
=100Ω)
=100Ω)
=10kΩ)
=100Ω,1kΩ)
0.6
t
t
r
f
30°
(R
(R
0.1
L
L
Switching Characteristics
Collector current I
=10kΩ)
=10kΩ)
0.4
20°
R
0.3
0.2
10°
R L
V CC
10V
Output
0°
0
Output pulse
1
Input pulse
t
r
10°
(R
C
t d
L
=1kΩ)
(typ.)
t
(Ta = 25°C)
f
(R
(mA)
20°
L
3
t r
=1kΩ)
30°
(typ.)
t f
40°
10
90%
10%
50°
60°
70°
80°
90°
4
-12
-16
-20
0.5
0.3
0.1
12
30
10
-4
-8
8
4
0
5
3
1
1
1
Ta = 25°C
TPS610(F) Using sample
:I
L
= 150μA at V
TLN110(F)
3
Coupling Characteristics With
E = 0.1mW/cm
Frequency Characteristics
3
CE
Frequency f (kHz)
Distance d (mm)
10
d
= 3V
5
V CC = 5 V
Ta = 25°C
Light source = TLN110(F)
TLN110(F)
TPS610(F)
I C
2
30
10
3V
TLN110(F) I
1kΩ
10
100
(typ.)
30
30
E
500Ω
= 50mW/sr
300
R
TPS610(F)
50
L
=100Ω
2007-10-01
1000
100