CGY195 SIEMENS [Siemens Semiconductor Group], CGY195 Datasheet
CGY195
Manufacturer Part Number
CGY195
Description
GaAs MMIC
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.CGY195.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGY195E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
_________________________________________________________________________________________________________
Tentative Data
ESD: Electrostatic discharge sensitive device,
Maximum ratings
Characteristics
Positive supply voltage
Supply current
Maximum input power
Channel temperature
Storage temperature
Total power dissipation
Ts: Temperature at soldering point
Pulse peak power
Thermal Resistance
Channel-soldering point
1) Plastic body identical to MW-6
Siemens Aktiengesellschaft
l l
l l
l l
l l
l l
CGY 195
Power amplifier for DECT application,
single voltage supply
Operating voltage range: 2.7 to 6 V
Pout = 26dBm at Vd=3.3V
Overall power added efficiency 44 %
observe handling precautions!
Type
(Ts < 81 °C)
Marking
t.b.d.
GaAs MMIC
Symbol
R thChS
Pinmax
P Pulse
pg. 1/3
T stg
T Ch
P tot
V D
I D
Ordering code
(taped)
t.b.d.
max. Value
-55...+150
GND
t.b.d.
t.b.d.
t.b.d.
t.b.d.
t b.d
150
5
8
RF_out / VD2
4
Package
RF-in
MW 5
1
CGY 195
HL EH PD 21
dBm
Unit
K/W
GND
°C
°C
VPW05980
W
W
V
A
2
1)
27.01.97
VD1
3
Related parts for CGY195
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Intel 80C32 - Siemens SAB-C501, Nearest Equivalent Replacement
Manufacturer:
Siemens Semiconductor Group
Part Number:
Description:
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)
Manufacturer:
SIEMENS [Siemens Semiconductor Group]
Datasheet:
Part Number:
Description:
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
Manufacturer:
SIEMENS [Siemens Semiconductor Group]
Datasheet:
Part Number:
Description:
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
Manufacturer:
SIEMENS [Siemens Semiconductor Group]
Datasheet:
Part Number:
Description:
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
Manufacturer:
SIEMENS [Siemens Semiconductor Group]
Datasheet:
Part Number:
Description:
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
Manufacturer:
SIEMENS [Siemens Semiconductor Group]
Datasheet:
Part Number:
Description:
IGBT MODULE
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
(BSMxxx) TRANSISTOR
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
main ratings
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
Manufacturer:
Siemens Semiconductor Group
Datasheet:
Part Number:
Description:
Manufacturer:
Siemens Semiconductor Group
Datasheet:
CGY195 Summary of contents
Page 1
Tentative Data l l Power amplifier for DECT application single voltage supply l l Operating voltage range: 2 Pout = 26dBm at Vd=3. Overall power added efficiency 44 % ESD: ...
Page 2
Electrical characteristics ( 25°C , f=1.89 GHz =50 Ohm, , unless otherwise specified) Characteristics Supply current VD=3.3V; Pin = +3 dBm Gain VD=3.3V -10 dBm Output Power VD=3.3V ...
Page 3
Functional Block Diagram (1) RFin Pin # Configuration 1 RFin RF input power 2 GND RF and DC ground 3 Pos. drain voltage of the 1st stage VD1 4 RFout/VD2 RF output power / Pos. drain voltage of the ...