ADL5390-EVAL AD [Analog Devices], ADL5390-EVAL Datasheet - Page 16

• Manufacturer Part Number: ADL5390-EVAL
• Description: RF/IF Vector Multiplier
• Manufacturer: AD [Analog Devices]

ADL5390
3GPP2 C.S0010-B, Table 6.5.2.1) was applied to the ADL5390.
A cavity-tuned filter was used to reduce noise from the signal
source being applied to the device. The 4.6 MHz pass band of
this filter is apparent in the subsequent spectral plots.
Figure 35 shows the output signal spectrum for a programmed
gain and phase of 5 dB and 45
V
V
measured in 30 kHz resolution bandwidth at 750 kHz and
1.98 MHz carrier offset. Noise floor is measured at ±4 MHz
carrier offset in a 1 MHz resolution bandwidth.
Holding the I and Q gain control voltages steady at 0.353 V,
input power was swept. Figure 36 shows the resulting output
power, noise floor, and adjacent channel power ratio. The noise
floor is presented as noise in a 1 MHz bandwidth as defined by
the 3GPP2 specification.
Figure 35. Output Spectrum, Single-Carrier CDMA2000 Test Model at −5 dBm,
Figure 36. Noise and ACP vs. Output Power, Single-Carrier CDMA2000 Test
IBB
IBBM
V
Input Signal–Filtered Using a Cavity-Tuned Filter (Pass Band = 4.6 MHz)
Model, V
I
–100
= V
–30
–40
–50
–60
–70
–80
–90
±1.98 MHz Carrier Offset, Noise Measured at ±4 MHz Carrier Offset
= V
–100
–10
–20
–30
–40
–50
–60
–70
–80
–90
= V
–30
Q
0
= 0.353 V, ACP Measured at 750 kHz and 1.98 MHz Carrier Offset,
QBB
CENTER 880MHz
REF LVL
5dBm
0.7dB OFFSET
1AVG
QBBP
I
= V
NOISE: 4MHz OFFSET, 1MHz RBW
= 0.353 V (centered around 500 mV), i.e., V
Cl2
Cl2
–25
− V
Q
= 0.353, ACP Measured in 30 kHz RBW at ±750 kHz and
ACP: 1.98MHz OFFSET, 30kHz RBW
QBBM
–20
MARKER 1 [T1]
–14.38dBm
880.00755511MHz
= 0.353 V. Adjacent channel power is
OUTPUT POWER (dBm)
Cl1
ACP: 750kHz OFFSET, 30kHz RBW
Cl1
C0
–15
o
. P
500kHz/
1
–10
OUT
RBW 30kHz
VWB 300kHz
SWT 2s
is equal to 0 dBm and
C0
CU1
CU1
1 [T1] –14.38dBm
1 [T1]
CH PWR
ACP UP
ACP LOW
ALT1 UP
ALT1 LOW –87.04dB
880.00755511MHz
–5
880.00755511MHz
RF ATT
MIXER
UNIT
CH PWR
0
–14.38dBm
0.13dBm
–62.00dB
–61.98dB
–87.02dB
SPAN 5MHz
CU2
CU2
20dB
–10dBm
dB
5
IBBP
–30
–40
–50
–60
–70
–80
–90
–100
1RM
EXT
A
−
Rev. 0 | Page 16 of 24
ACP is still in compliance with the standard (<−45 dBc @
750 kHz and <−60 dBc @ 1.98 MHz) even with output powers
greater than +3 dBm. At low output power levels, ACP at
1.98 MHz carrier offset degrades as the noise floor of the
ADL5390 becomes the dominant contributor to measured ACP.
Measured noise at 4 MHz carrier offset begins to increase
sharply above 2 dBm output power. This increase is not due to
noise, but results from increased carrier-induced distortion. As
output power drops below 2 dBm, the noise floor drops towards
−90 dBm.
With a fixed input power of 2.16 dBm, the output power was
again swept by changing V
The resulting output power, ACP, and noise floor are shown in
Figure 37.
In contrast to Figure 36, Figure 37 shows that for a fixed input
power, ACP remains fairly constant as gain and phase are
changed (this is not true for very high RF input powers) until
the noise floor of the ADL5390 becomes the dominant con-
tributor to the measured ACP.
CDMA2000 Test Model, V
and ±1.98 MHz Carrier Offset, Noise Measured at ±4 MHz Carrier Offset
–16
–23
–30
–37
–44
Figure 37. Output Power, Noise, and ACP vs. I and Q Control Voltages,
–2
–9
5
0
NOISE: 4MHz OFFSET, 1MHz RBW
ACP: 1.98MHz OFFSET, 30kHz RBW
0.1
ACP: 750kHz OFFSET, 30kHz RBW
I
= V
0.2
Q
, ACP Measured in 30 kHz RBW at ±750 MHz
IBB
V
V
OUT
I(Q)BB
and V
vs. V
0.3
IBB
QBB
/V
from 0 V to 500 mV.
QBB
0.4
0.5
–30
–40
–50
–60
–70
–80
–90
–100