KM68257E-10 SAMSUNG [Samsung semiconductor], KM68257E-10 Datasheet - Page 3

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KM68257E-10

Manufacturer Part Number
KM68257E-10
Description
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges.
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
KM68257E, KM68257EI
RECOMMENDED DC OPERATING CONDITIONS
NOTE: The above parameters are also guaranteed at industrial temperature range.
DC AND OPERATING CHARACTERISTICS
NOTE: The above parameters are also guaranteed at industrial temperature range.
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Input/Output Capacitance
Input Capacitance
** V
* V
* V
IH
IL
CC
(Max) = V
(Min) = -2.0(Pulse Width 7ns) for I 20mA
Parameter
Parameter
=5.0V, Temp.=25 C
CC
Item
Supply Relative to V
CC
Parameter
+2.0V(Pulse Width 7ns) for I 20mA
(T
A
=25 C, f=1.0MHz)
Commercial
Industrial
SS
Symbol
V
SS
V
I
V
I
I
I
SB1
OH1*
I
CC
LO
SB
OH
LI
OL
Symbol
Symbol
V
V
V
V
CC
SS
C
IH
IL
C
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
IN
OUT
IN
=8mA
=-4mA
= V
=0.1mA
=0mA
V
= V
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
SS
IN
to V
to V
= V
V
Symbol
-0.5*
Test Conditions
IN
Min
(T
CC
4.5
2.2
Test Conditions
T
CC
V
0
, V
IH
P
CC
T
T
STG
- 3 -
A
CC
IH
A
A
D
-0.2V,
=0 to 70 C,V
IH
or V
OUT
V
V
or WE=V
IN
I/O
IN
=0V
IL,
=0V
0.2V
(T
A
=0 to 70 C)
IL
CC
Typ
5.0
0
-
-
=5.0V 10% unless otherwise specified)
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
-40 to 85
10ns
12ns
15ns
Rating
0 to 70
MIN
1.0
-
-
V
CC
Min
2.4
Max
-1
-1
5.5
0.8
-
-
-
-
-
-
-
+0.5**
0
PRELIMINARY
CMOS SRAM
Max
8
7
Max
3.95
0.4
80
80
80
20
1
1
2
-
Unit
W
V
V
C
C
C
August 1998
Revision 0.0
Unit
V
V
V
V
Unit
pF
pF
Unit
mA
mA
mA
V
V
V
A
A

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