HI1-200/883 INTERSIL [Intersil Corporation], HI1-200/883 Datasheet
HI1-200/883
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HI1-200/883 Summary of contents
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... Op Amp Gain Switching Networks Pinouts INPUT SOURCE GATE DRAIN OUTPUT CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 All other trademarks mentioned are the property of their respective owners. HI-200/883 FN6059.1 HI1-200/883 (CERDIP) TOP VIEW ...
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Absolute Maximum Ratings Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . .40V ±V to Ground (V+, V ...
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TABLE 1. D.C. ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Tested at +15V, −V SUPPLY SUPPLY D.C. PARAMETERS SYMBOL Supply Current -I All Channels V CC All Channels V TABLE 2. A.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Tested at ...
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Test Circuits GND FIGURE 1. INPUT LEAKAGE CURRENT GND FIGURE (OFF GND ...
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Test Circuits (Continued GND FIGURE HI-200/883 V D FIGURE 9. CROSSTALK BETWEEN CHANNELS FIGURE 8. OFF CHANNEL ISOLATION ...
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Switching Waveforms 6 HI-200/883 FIGURE 10. FIGURE 11. FIGURE 12. ...
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Burn-In Circuits NOTES 10kΩ 0.01µF (per socket) or 0.1µF (per row IN4002 or equivalent |(V+) - (V-)| = ...
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Schematic Diagrams V+ GND V- A’ INPUT A’ 8 HI-200/883 TTL/CMOS REFERENCE CIRCUIT V REF R 6 300 P13 ...
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Schematic Diagrams (Continued REF 200Ω Test Circuits and Waveforms ...
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Test Circuits and Waveforms 100 S(OFF) D(OFF D(ON) 1.0 0 TEMPERATURE ( FIGURE 17. LEAKAGE CURRENT vs TEMPERATURE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil ...
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Die Characteristics DIE DIMENSIONS: 54 mils x 79mils x 19 mils METALLIZATION: Type: Aluminum ±2k Å Å Thickness: 16k GLASSIVATION: Type: Nitride over Silox ±2k Å Å Silox Thickness: 12k ±1k Å Å Nitride Thickness: 3.5k Metallization Mask Layout GND ...