MAX66120 MAXIM [Maxim Integrated Products], MAX66120 Datasheet - Page 2

• Manufacturer Part Number: MAX66120
• Description: ISO 15693-Compliant 1Kb Memory Fob Powered Entirely Through the RF Field
• Manufacturer: MAXIM [Maxim Integrated Products]

ISO 15693-Compliant 1Kb Memory Fob
ABSOLUTE MAXIMUM RATINGS
Maximum Incident Magnetic Field Strength ..........141.5dBµA/m
Operating Temperature Range ...........................-25°C to +50°C
ELECTRICAL CHARACTERISTICS
(T
The MAX66120 combines 1024 bits of user EEPROM,
128 bits of user and control registers, a 64-bit unique
identifier (UID), and a 13.56MHz ISO 15693 RF inter-
face in a single key fob. The memory is organized as 18
blocks of 8 bytes each. Each block has a user-readable
write-cycle counter. Four adjacent user EEPROM
blocks form a memory page (pages 0 to 3). Memory
protection features include write protection and EPROM
emulation, which the user can set for each individual
memory page. The memory of the MAX66120 is
accessed through the standard ISO 15693 memory and
control function commands. The data rate can be as
high as 26.69kbps. The MAX66120 supports AFI and
DSFID. Applications of the MAX66120 include driver
identification (fleet application), access control, and
asset tracking.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: System requirement.
Note 2: Guaranteed by simulation; not production tested.
Note 3: Write-cycle endurance is degraded as T
Note 4: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data
Note 5: Production tested at 13.56MHz only.
Note 6: Measured from the time at which the incident field is present with strength greater than or equal to H
2
EEPROM
Programming Time
Endurance
Data Retention
RF INTERFACE
Carrier Frequency
Activation Field Strength
Write Field Strength
Maximum Field Strength
Power-Up Time
A
= -25°C to +50°C.) (Note 1)
_______________________________________________________________________________________
sheet limit at operating temperature range is established by reliabiliity testing.
which the MAX66120’s internal power-on reset signal is deasserted and the device is ready to receive a command frame.
Not characterized or production tested; guaranteed by simulation only.
PARAMETER
Detailed Description
SYMBOL
N
t
H
PROG
H
t
CYCLE
H
t
POR
RET
MAX
f
MIN
WR
C
A
(Note 2)
At +25°C (Note 3)
(Note 4)
(Notes 1, 5)
At 25°C (Note 2)
At 25°C (Note 2)
At 25°C (Note 2)
(Notes 2, 6)
increases. Not 100% production tested; guaranteed by reliability monitor sampling.
CONDITIONS
Relative Humidity ..............................................(Water Resistant)
Storage Temperature Range ...............................-25°C to +50°C
Figure 1 shows the relationships between the major
control and memory sections of the MAX66120. The
device has three main data components: 1) 64-bit UID,
2) four 256-bit pages of user EEPROM, and 3) two 8-
byte blocks of user and control registers. Figure 2
shows the applicable ISO 15693 commands and their
purpose. The network function commands allow the
master to identify all slaves in its range and to change
their state, e.g., to select one for further communication.
The protocol required for these network function com-
mands is described in the Network Function
Commands section. The memory and control functions
access the memory of the MAX66120 for reading and
writing. The protocol for these memory and control
function commands is described in the Memory and
Control Function Commands section. All data is read
and written least significant bit (LSb) first, starting with
the least significant byte (LSB).
200,000
13.553
MIN
40
9
13.560
122.0
122.4
137.5
TYP
(MIN)
to the time at
13.567
MAX
1.0
10
Overview
dBμA/m
dBμA/m
dBμA/m
Cycles
UNITS
Years
MHz
ms
ms