CS223-2M_10 CENTRAL [Central Semiconductor Corp], CS223-2M_10 Datasheet
CS223-2M_10
Manufacturer Part Number
CS223-2M_10
Description
SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS
Manufacturer
CENTRAL [Central Semiconductor Corp]
Datasheet
1.CS223-2M_10.pdf
(2 pages)
MAXIMUM RATINGS: (T C =25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (T C =60°C)
Peak One Cycle Surge, t=10ms
I
Peak Gate Power, tp=10μs
Average Gate Power Dissipation
Peak Gate Current, tp=10μs
Peak Gate Voltage, tp=10μs
Operating Junction Temperature
Storage Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)
SYMBOL
I DRM, I RRM
I DRM, I RRM
I GT
I H
V GT
V TM
dv/dt
2
t Value for Fusing, t=10ms
600 THRU 800 VOLTS
2 AMP SILICON SCR
SURFACE MOUNT
SOT-223 CASE
TEST CONDITIONS
Rated V DRM, V RRM, R GK =1KΩ
Rated V DRM , V RRM, R GK =1KΩ, T C =125°C
V D =12V
R GK =1KΩ
V D =12V
I TM =4.0A, tp=380μs
V D =
CS223-2M
CS223-2N
2
/
3
V DRM, R GK =1KΩ, T C =125°C
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS223-2M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
V DRM, V RRM
SYMBOL
I T(RMS)
P G(AV)
I TSM
P GM
V GM
I GM
T stg
Θ JA
T J
I
2
MIN
t
10
CS223-2M
TYP
1.4
20
600
-40 to +125
-40 to +150
w w w. c e n t r a l s e m i . c o m
0.24
62.5
2.0
2.0
0.1
1.0
8.0
10
R1 (12-February 2010)
CS223-2N
MAX
100
200
2.0
0.8
1.7
10
800
UNITS
UNITS
V/μs
°C/W
mA
μA
μA
μA
A
°C
°C
V
V
W
W
V
A
A
A
V
2
s
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CS223-2M_10 Summary of contents
Page 1
... V DRM =1KΩ =125° DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER ...
Page 2
... CS223-2M CS223-2N SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER (12-February 2010) ...