CAT5132GZ-100TE13 CATALYST [Catalyst Semiconductor], CAT5132GZ-100TE13 Datasheet - Page 4

• Manufacturer Part Number: CAT5132GZ-100TE13
• Description: 15 Volt Digitally Programmable Potentiometer (DPP) with 128 Taps and 2-wire Interface
• Manufacturer: CATALYST [Catalyst Semiconductor]

Doc. No. 25092, Rev. 00
CAT5132
D.C. ELECTRICAL CHARACTERISTICS
(Over recommended operating conditions unless otherwise stated.)
CAPACITANCE
T
A.C. CHARACTERISTICS
Notes:
1. This parameter is tested initially and after a design or process change that affects the parameter.
S
S
S
A
I
t
t
t
t
t
y
y
y
I
S
= 25˚C, f = 1.0MHz, V
H
B
H
S
S
V
F
t
t
T
t
t
S
C
I
I
B
V
V
C
I H
m
m
m
t
U
D
L
U
D
R
F
U
t
I
C
C
B
I
D
V (
S
I
A
O
L
O
F
S :
S :
D :
S :
I L
C
V (
/ I
G
C
L I
H I
N I
O
C
(
A
(
(
H
W
b
L
b
O
b
) 1
) 1
) 1
C
2
T
H
T
A
T
1
(
L
) +
1
) 1
C
O
A
A
T
l o
l o
l o
)
n I
n I
n I
n I
n I
P
V (
P
(
S
O
O
C
N
S
S
C
C
S
D
S
S
S
D
V
i T
N
o
o
a t
+
o
L
a t
a t
a
D
D
o t
a
o l
o l
o l
p
u
p
p
u
p
p
m
l o
o
w
w
s i
C
a t
a t
t u
p t
t u
t u
p t
u
t u
A
A
k c
k c
k c
n
t r
t r
p
n
S
e
t a
r e
r e
/ t
e
d
v
t u
t u
a t
L
a
a
C
C
C
n i
O
L
L
H
O
C
h t
e l i
l o
b
F
L
H
S
o
n
n
e
o
S
S
n
o
o
o
t u
y
g i
u
a
L
L
o
e r
w
e
t a
H
d
d
u
g i
a
w
d
n
n
n
u
u
p t
p
W
e
o
w
h
C
p
k
b
o
d
e l i
b
d
d
H
p
p
a
q
h
S
S
o t
a
w
p
a
V
t u
P
r u
y
d l
t i
i r
V
u
t i
t i
p
p
i c
u
P
k
C
C
o
e r
g
P
l o
o i
o i
o i
a
e t
s
y l
y l
V
P
e
a
l o
W
C
a t
S
d l
e r
r e
e
C
L
L
r e
i T
a r
n
g
a t
CC
s s
n
l o
a
n
n
D
m
R /
r u
a t
C
C
n
R
t n
a
o i
y c
C
e
R
F
s
a r
m
i T
o i
m
g
a t
A
H
S
c
u
p
o i
g
r u
r u
e r
l l a
e
T I
d
s i
r u
C
e
= 5.0V
S
e
d
e
m
t s
V (
m
a
e
e
o
t e
g
a
n
D
t n
e
e
e r
e r
) E
r u
i c
u t
e r
d l
e
e
) d
A (
t e
i T
C
a
b
u t
r e
i T
a t
i T
t n
t n
C
e r
p
t n
V (
P
a t
e
, 0
i T
m
r e
p
m
n
m
=
a
i T
t n
f
C
m
e
c
e
O
e r
i T
a r
A
C
e
5
m
e
e
t u
, 1
m
) V
C
e
=
m
e
S (
o
e
b
. 3
t e
a
S
f (
n
D
e
n
C
) 0
r o
s
r e
o f
d
) A
a t
) L
e r
A
a
s (
t n
C
F
F
I
V
V
V
V
V
V
R
e
O
a
t a
S
S
K
L
C
C
N I
C
N I
O
e
e
C
C
n
C
C
C
U
=
p
L
L
O
=
=
T
i F
e
S
=
=
=
e
=
=
w
=
3
C
t u
G
G
. g
a
5
5
5
m
4
4
T
L
e t
, V
G
t
5 .
5 .
N
N
0
0
a r
e
A
) 1
T
d
N
&
D
D
0
0
t s
, V
, V
e
V
n
k
k
D
S
t s
S
s
4
r o
o t
H
H
+
V
V
C
n I
n I
a t
m
D
o t
/ I
, z
, z
=
N I
o
C
O
V
p
p
V
t r
A
i
s s
n
t u
t u
C
V
o
=
=
S
S
C
1
C
d
C
n I
C
5
C
n
o i
D
D
0
0
t i
C
o
=
=
,
V
d
p
V
A
A
V
n
n
o i
S
u
t i
G
G
d
(
c
s t
O
O
D
o i
(
) 1
n
) 1
t i
N
N
a
s
A
p
p
o i
n
n
D
D
e
e
s
) n
=
s
, n
, n
a t
V
t r
C
C
V
C
C
V
M
M
M
1
0
0
0
0
1
1
1 -
x
C
0
0
6 .
6 .
6 .
6 .
n i
2 .
2 .
n i
n i
C
0
0
=
Characteristics subject to change without notice
7 .
2
7 .
© 2005 by Catalyst Semiconductor, Inc.
V
-
V
C
5
C
M
C
M
M
C
5 .
4
3
3
0
0
1
1
1
5
5
x
+
8
6
0
0
a
1
0 .
4 .
a
a
1
3 .
0
0
0
V
0
0
0
x
x
x
0
1
3 .
0 .
U
U
U
m
m
k
µ
µ
µ
µ
i n
p
p
µ
µ
µ
µ
µ
µ
µ
µ
i n
i n
n
n
n
n
V
V
V
H
A
A
A
A
F
F
s
s
s
s
s
s
s
s
A
A
s
s
s
s
s t
s t
s t
z