ADF4351BCPZ AD [Analog Devices], ADF4351BCPZ Datasheet - Page 6

• Manufacturer Part Number: ADF4351BCPZ
• Description: Wideband Synthesizer
• Manufacturer: AD [Analog Devices]

ADF4351
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
GND = AGND = DGND = CP
VCO
VCO
A
Peak Temperature
Time at Peak Temperature
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
DD
DD
1
1
1
GND
1
= SD
1
GND
= A
GNDVCO
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
= 0 V.
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. 0 | Page 6 of 28
This device is a high performance RF integrated circuit with an
ESD rating of <1.5 kV and is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count for the
986 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θ
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type
32-Lead LFCSP (CP-32-2)
ESD CAUTION
JA
) is specified for a device with the
ADF4351
θ
27.3
JA
is 36,955 (CMOS) and
Data Sheet
Unit
°C/W