S9015W HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.], S9015W Datasheet
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S9015W
Manufacturer Part Number
S9015W
Description
TRANSISTOR(PNP)
Manufacturer
HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Datasheet
1.S9015W.pdf
(1 pages)
TRANSISTOR(PNP)
FEATURES
MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
CLASSIFICATION OF
Small Surface Mount Package
High DC Current Gain
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
semiconductor
JinYu
1
Symbol
V
V
V
R
T
P
CBO
CEO
EBO
I
T
ΘJA
stg
C
C
j
MARKING
RANGE
Parameter
RANK
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
h
FE
a
=25℃ unless otherwise noted)
Parameter
200–450
Symbol
a
V
V
V
V
V
=25℃ unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
L
I
www.htsemi.com
CE(sat)
BE(sat)
V
C
h
CBO
EBO
f
FE
BE
T
ob
I
I
I
V
V
V
I
I
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
=-100µA, I
=-100µA, I
=-100µA, I
=-100mA, I
=-100mA, I
=-50V, I
=-5V, I
=-5V, I
=-5V, I
=-5V,I
=-10V, I
-55~+150
M6
Test
Value
-100
200
625
150
-50
-45
C
-5
C
C
C
=-10mA , f=30MHz
=0
=-1mA
=-1mA
E
E
E
B
C
=0
=0, f=1MHz
B
B
=0
=0
=0
=-10mA
=-10mA
conditions
450–1000
℃/W
Unit
mW
mA
℃
℃
V
V
V
H
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
Min
-0.6
200
150
-50
-45
-5
Typ
Date:2011/05
S90 1 5 W
-0.75
1000
-100
-100
Max
-0.3
-1
7
Unit
MHz
nA
nA
pF
V
V
V
V
V
V