KM681000B Samsung, KM681000B Datasheet - Page 7
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KM681000B
Manufacturer Part Number
KM681000B
Description
128K x8 bit Low Power CMOS Static RAM
Manufacturer
Samsung
Datasheet
1.KM681000B.pdf
(11 pages)
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KM681000B Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE
TIMING WAVEFORM OF READ CYCLE (1)
(CS
1
=OE=V
Address
Data Out
OE
NOTES
1.
2. At any given temperature and voltage condition,
Address
CS
CS
Data out
t
HZ and
1
2
IL
, CS
(READ CYCLE)
2
t
= WE= V
OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage le vels.
IH
)
Previous Data Valid
High-Z
(WE=V
t
HZ(max.) is less than
(Address Controlled)
t
IH
LZ
)
t
OLZ
t
OH
t
AA
t
t
CO1
CO2
t
OE
t
AA
t
LZ(min.) both for a given device and from device to device.
t
RC
t
RC
Data Valid
Data Valid
t
OHZ
t
PRELIMINARY
HZ(1,2)
t
OH
CMOS SRAM
Revision 0.3
April 1996