CY7C199-10ZI Cypress Semiconductor, CY7C199-10ZI Datasheet - Page 5

• Manufacturer Part Number: CY7C199-10ZI
• Description: 32K x 8 Static RAM
• Manufacturer: Cypress Semiconductor

Document #: 38-05160 Rev. *A
Switching Characteristics
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2
Notes:
12. Device is continuously selected. OE, CE = V
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
Parameter
DATA OUT
DATA OUT
CURRENT
ADDRESS
SUPPLY
V
CE
OE
CC
[10,11]
CE HIGH to Power-down
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
[12, 13]
[13, 14]
PREVIOUS DATA VALID
HIGH IMPEDANCE
Description
t
PU
t
LZCE
Over the Operating Range (-20, -25, -35, -45)
[9]
[8]
t
t
LZOE
ACE
IL
.
t
OHA
50%
t
DOE
t
AA
Min.
20
15
15
15
10
7C199-20
0
0
0
3
t
RC
Max.
20
10
t
RC
Min.
25
18
20
18
10
7C199-25
0
0
0
3
DATA VALID
Max.
[3, 7]
20
11
Min.
35
22
30
22
15
0
0
0
3
7C199-35
Max.
DATA VALID
20
15
t
t
HZOE
HZCE
Min.
t
45
22
40
22
15
PD
0
0
0
3
7C199-45
50%
Max.
CY7C199
IMPEDANCE
25
15
Page 5 of 13
HIGH
Unit
ICC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISB