M29W160 ST Microelectronics, M29W160 Datasheet - Page 8

• Manufacturer Part Number: M29W160
• Description: 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
• Manufacturer: ST Microelectronics

M29W160BT, M29W160BB
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, V
Standby. When Chip Enable is High, V
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high-imped-
ance state. To reduce the Supply Current to the
Standby Supply Current, I
be held within V
level see Table 14, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
til the operation completes.
Automatic Standby. If CMOS levels (V
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 5 and 6, Bus Operations.
Block Protection and Blocks Unprotection. Each
block can be separately protected against acci-
dental Program or Erase. Protected blocks can be
unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on pro-
gramming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes de-
pending on whether the memory is in 16-bit or 8-
bit mode. See either Table 7, or 8, depending on
the configuration that is being used, for a summary
of the commands.
8/25
IH
.
CC3
, for Program or Erase operations un-
ID
CC
to be applied to some pins.
0.2V. For the Standby current
CC2
, Chip Enable should
CC
CC2
IH
. The
0.2V)
, the
Read/Reset Command. The Read/Reset com-
mand returns the memory to its Read mode where
it behaves like a ROM or EPROM, unless stated
otherwise (see Security Data command). It also
resets the errors in the Status Register. Either one
or three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Erase operation or following a Programming
or Erase error then the memory will take upto 10
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
Auto Select Command. The Auto Select com-
mand is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are re-
quired to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another com-
mand is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
may be set to either V
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = V
address bits may be set to either V
Device Code for the M29W160BT is 22C4h and
for the M29W160BB is 2249h.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = V
A1 = V
the block. The other address bits may be set to ei-
ther V
ed then 01h is output on Data Inputs/Outputs
DQ0-DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command re-
quires four Bus Write operations, the final write op-
eration latches the address and data in the internal
state machine and starts the Program/Erase Con-
troller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 10. Bus Read
operations during the program operation will out-
put the Status Register on the Data Inputs/Out-
puts. See the section on the Status Register for
more details.
IL
IH
or V
, and A12-A19 specifying the address of
IL
IH
and A1 = V
. If the addressed block is protect-
IL
IH
or V
IL
and A1 = V
. The other address bits
IH
. The Manufacturer
IL
IL
or V
. The other
IH
. The
IL
s
,