TA84002F Toshiba Semiconductor, TA84002F Datasheet - Page 8

• Manufacturer Part Number: TA84002F
• Description: TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP
• Manufacturer: Toshiba Semiconductor

ELECTRICAL CHARACTERISTICS
Input Voltage
Input Current
Supply Current
Output Saturation Voltage
(Lower−side)
ON Resistor (Upper−side)
Diode Forward Voltage (Lower−side)
Diode Forward Voltage (Upper−side)
Reference Voltage Range
Reference Current
Reference Divider Ratio
Setting Current
Thermal Shutdown Temperature
Thermal Shutdown Hysteriesis
Output Leakage Current
Pch MOS Drive Current
CHARACTERISTIC
SYMBOL
V
V
V
V
VF(H)
I
VF(L)
IL (H)
I
I
Ron1
GAIN
IL (L)
IN
I
I
I
I
I
TSD
IN
IN
IM1
IM2
IM3
V
IN
SAT
SAT
IN
CC1
CC2
CC3
CC4
CC5
I
I
∆T
I
set
ref
G
ref
(H)
(L)
(L)
(H)
(L)
1
2
(Ta = 25°C, V
TEST
CIR−
CUIT
―
10
11
―
―
―
12
13
1
2
3
4
3
4
3
5
6
7
8
9
PHASE, ENABLE
PHASE, ENABLE, V
PHASE, V
ENABLE, V
ENABLE A / B = Low
2−Phase 100% ON
ENABLE A / B = Low
2−Phase 100% OFF
ENABLE A = Low,
B = High
1−Phase 100% ON
ENABLE A = Low,
B = High
1−Phase 100% OFF
ENABLE A / B = High
2−Phase OFF
ENABLE A / B = Low
2−Phase ON
ENABLE A = Low,
B = High
1−Phase ON
ENABLE A / B = High
2−Phase OFF
I
I
I
I
I
V
VNF / Vref
V
T
P−channel MOS
O
O
O
F
F
j
ref
ref
8
= 1.0 A
= 1.0 A
= 0.5 A
= 1.0 A
= 0.5 A
= 2.5 V
= 2.5 V, RNF = 1 Ω
TEST CONDITION
CC
IN
IN
= GND
= 5 V, V
= GND
IN
= 5 V
M
= 24 V)
− 0.3 V
GND
0.17
0.35
MIN
330
2.0
1.0
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
TYP.
530
0.35
0.65
0.95
0.45
110
165
4.5
0.6
1.4
2.5
0.2
0.2
55
55
15
―
―
2
0
6
6
6
5
4
0
0
V
V
0.3 V
MAX
0.23
0.55
TA84002F
100
180
100
730
CC
0.8
0.8
2.0
1.0
2.0
1.8
CC
0.5
20
14
90
14
14
13
11
50
―
―
2001-09-06
1
9
5
+
−
UNIT
mA
µA
µA
µA
µA
°C
°C
V
V
Ω
V
V
V
A