AD587TQ Analog Devices, AD587TQ Datasheet - Page 3

• Manufacturer Part Number: AD587TQ
• Description: High Precision 10 V Reference
• Manufacturer: Analog Devices

REV. D
ABSOLUTE MAXIMUM RATINGS*
V
Power Dissipation (+25 C) . . . . . . . . . . . . . . . . . . . . . 500 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . –65 C to +150 C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300 C
Package Thermal Resistance
Output Protection: Output safe for indefinite short to ground and
momentary short to V
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
DIE SPECIFICATIONS
Parameter
Output Voltage
Gain Adjustment
Line Regulation
Load Regulation
Quiescent Current
Short-Circuit Current-to-Ground
Short-Circuit Currrent-to-V
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
IN
Sourcing 0 < I
13.5 V < + V
Sinking –10 < I
JC
JA
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 C/W
IN
OUT
OUT
< 36 V
< 10 mA
< 0 mA
IN
.
NOTES
1
2
Both V
Sense and force grounds must be tied together.
Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils
Die Dimensions: The dimensions given have a tolerance of 2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices does not recommend
gold-backed dice for most applications.
Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-
way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size . The perpen-
dicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies
substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a layer of glassivation . All areas are
covered except bonding pads and scribe lines.
Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum. Minimum
thickness is 10,000Å.
Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows
OUT
have 3.5 mils by 3.5 mils minimum.
OUT
The following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25 C only.
(T
A
= +25 C, V
pads should be connected to the output.
Min
9.990
–1
AD587JCHIPS
Typ Max
2
IN
= +15 V unless otherwise noted)
10.010 V
3
100
100
100
4
70
70
Units
%
mA
mA
mA
V/mA
V/mA
V/V
–3–
Die Size: 0.081
PIN CONFIGURATION
GND
+V
*
TP
TP
TP DENOTES FACTORY TEST POINT.
NO CONNECTIONS SHOULD BE MADE
TO THESE PINS.
IN
*
*
DIE LAYOUT
1
2
3
4
2 mils.
(Not to Scale)
TOP VIEW
AD587
0.060 Inches
8
7
6
5
NOISE
REDUCTION
TP
V
TRIM
OUT
*
AD587