TFBS6712-TR1 VISHAY [Vishay Siliconix], TFBS6712-TR1 Datasheet - Page 6

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TFBS6712-TR1

Manufacturer Part Number
TFBS6712-TR1
Description
Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA Applications with Low voltage Logic (1.8 V)
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Optoelectronic Characteristics, continued
T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Document Number 84674
Rev. 1.2, 21-Feb-07
Transmitter
IRED operating current, switched
current control
Output leakage IRED current
Output radiant intensity,
see figure 3, recommended
application circuit
Output radiant intensity,
see figure 3, recommended
application circuit
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak - emission wavelength
Optical rise time,
Optical fall time
Optical output pulse duration
Optical output pulse duration
Optical output pulse duration
Optical output pulse duration
Optical overshoot
amb
= 25 °C, V
Parameter
CC
= 2.4 V to 3.6 V unless otherwise noted.
See derating curve. For 3.3-V
operation no external resistor is
needed.
V
V
TXD = High, SD = Low, R
V
TXD = High, SD = Low, R
V
TXD = Low or SD = High
(Receiver is inactive as long as
SD = High)
Input pulse width 217 ns, 1.152
Mbit/s
Input pulse width 125 ns, 4 Mbit/s
Input pulse width 250 ns, 4 Mbit/s
Input pulse width t < 80 µs
Input pulse width t ≥ 80 µs
CC
CC
CC
CC
= V
= V
= V
= 3.6 V, α = 0°, 15°
IRED
IRED
IRED
Test Conditions
= 3.3 V, TXD = Low
= 3.3 V, α = 0°
= 3.3 V, α = 0°, 15°
1
1
= 1 Ω
= 1 Ω
Symbol
I
t
IRED
t
ropt
t
t
t
t
t
λ
fopt
I
I
I
I
opt
opt
opt
opt
opt
α
D
e
e
e
p
,
Min
330
880
200
116
241
- 1
45
25
10
20
Vishay Semiconductors
± 24
Typ.
440
115
217
125
250
75
t
TFBS6712
0.04
Max
600
300
300
900
230
134
259
40
85
25
1
www.vishay.com
mW/sr
mW/sr
mW/sr
Unit
mA
nm
µA
ns
ns
ns
ns
µs
µs
%
°
275

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