TEMD5110 VISHAY [Vishay Siliconix], TEMD5110 Datasheet - Page 2

• Manufacturer Part Number: TEMD5110
• Description: Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
• Manufacturer: VISHAY [Vishay Siliconix]

TEMD5110X01
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
amb
amb
amb
Figure 1. Reverse Dark Current vs. Ambient Temperature
94 8403
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
1000
100
10
Parameter
Parameter
1
20
T
amb
40
- Ambient Temperature (°C)
k
o
60
I
I
V
V
V
E
E
E
E
E
V
V
V
V
F
R
V
R
R
R
e
e
e
e
e
R
R
R
R
= 50 mA
R
= 100 µA, E = 0
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 10 V, R
= 10 V, R
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
= 5 V
= 10 V, λ = 950 nm
= 10 V
80
Test condition
Test condition
L
L
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
2
2
2
2
2
100
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm,
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Symbol
Symbol
V
TK
NEP
TK
λ
C
C
V
V
(BR)
I
I
λ
I
ϕ
0.5
t
t
ro
ra
k
p
r
f
F
D
D
o
Vo
Ik
94 8409
1.4
1.2
1.0
0.8
0.6
0
Min
Min
60
45
T
20
amb
- Ambient Temperature (°C)
790 to 1050
4 x 10
λ = 950 nm
V
- 2.6
± 65
40
Typ.
Typ.
350
940
100
100
0.1
70
25
50
55
R
1
2
= 5 V
-14
60
Document Number 84658
Max
Max
1.3
30
40
80
Rev. 1.2, 07-May-07
100
W/√ Hz
mV/K
%/K
Unit
Unit
deg
mV
nm
nm
nA
µA
µA
pF
pF
ns
ns
V
V