RBV1006D EIC [EIC discrete Semiconductors], RBV1006D Datasheet - Page 2

• Manufacturer Part Number: RBV1006D
• Description: SILICON BRIDGE RECTIFIERS
• Manufacturer: EIC [EIC discrete Semiconductors]

0.01
10
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
1.0
0.1
12
10
8
6
4
2
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D )
HEAT-SINK MOUNTING, Tc
RECTIFIED CURRENT
(8.2cm x 8.2cm x 0.3cm)
PER DIODE
0.6
25
3.2" x 3.2" x 0.12" THK.
FORWARD VOLTAGE, VOLTS
Al.-FINNED PLATE
CASE TEMPERATURE, ( C)
0.8
50
1.0
75
1.2
100
Pulse Width = 300 s
1 % Duty Cycle
T
J
125
1.4
= 25 C
150
1.6
1.8
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0.01
300
250
200
150
100
1.0
10
0.1
50
0
1
0
8.3 ms SINGLE HALF SINE WAVE
PERCENT OF RATED REVERSE
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PER DIODE
20
2
JEDEC METHOD
40
4
VOLTAGE, (%)
6
60
T
10
J
T
= 100 C
J
80
T
= 25 C
J
20
= 50 C
100
40
120
60
140
100