BPW83_08 VISHAY [Vishay Siliconix], BPW83_08 Datasheet - Page 2

• Manufacturer Part Number: BPW83_08
• Description: Silicon PIN Photodiode
• Manufacturer: VISHAY [Vishay Siliconix]

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81530
Rev. 1.4, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: [e-mail]
V
R
V
V
= 10 V
R
R
E
E
E
80
= 10 V, R
= 10 V, R
V
V
e
e
e
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
I
R
V
= 10 V, λ = 870 nm
R
= 100 µA, E = 0
= 10 V, E = 0
100
V
L
L
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 5 V
2
2
2
, λ = 870 nm,
, λ = 870 nm
, λ = 870 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
NEP
λ
C
C
V
I
I
λ
(BR)
I
ϕ
t
ro
ra
0.5
t
k
r
f
D
D
o
p
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
43
T
20
amb
Vishay Semiconductors
- Ambient Temperature (°C)
790 to 1050
4 x 10
λ = 950 nm
V
40
TYP.
± 65
350
950
100
100
R
70
25
38
45
2
= 5 V
-14
60
MAX.
30
40
80
www.vishay.com
BPW83
100
W/√ Hz
UNIT
deg
mV
nm
nm
nA
pF
pF
µA
µA
ns
ns
V
411