B5817WS_1 SY [Changzhou Shunye Electronics Co.,Ltd.], B5817WS_1 Datasheet - Page 2

• Manufacturer Part Number: B5817WS_1
• Description: Schottky Barrier Diode
• Manufacturer: SY [Changzhou Shunye Electronics Co.,Ltd.]

Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
TYPICAL CHARACTERISTICS
Symbol Test Condition
V
I
V
C
R
(BR)
F
D
www.shunyegroup.com
@ Ta=25℃ unless otherwise specified
I
V
V
V
B5817WS
B5818WS
B5819WS
V
R
R
R
R
R
=1mA
=20V
=30V
=40V
=4V,f=1MHz
@ Ta=25℃ unless otherwise specified
B5817WS
B5818WS
B5819WS
I
I
I
I
I
I
B5817WS-B5819WS
B5817WS
B5818WS
B5819WS
F
F
F
F
F
F
=1A
=3A
=1A
=3A
=1A
=3A
MIN
20
30
40
MAX
0.45
0.75
0.55
0.875
0.6
0.9
120
1
UNIT
mA
pF
V
V