ADN2526ACPZ-R2 AD [Analog Devices], ADN2526ACPZ-R2 Datasheet - Page 3

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ADN2526ACPZ-R2

Manufacturer Part Number
ADN2526ACPZ-R2
Description
11.3 Gbps Active Back-Termination, Differential Laser Diode Driver
Manufacturer
AD [Analog Devices]
Datasheet
SPECIFICATIONS
VCC = VCC
T
Table 1.
Parameter
BIAS CURRENT (IBIAS)
MODULATION CURRENT (IMODP, IMODN)
DATA INPUTS (DATAP, DATAN)
BIAS CONTROL INPUT (BSET)
MODULATION CONTROL INPUT (MSET)
BIAS MONITOR (IBMON)
AUTOMATIC LASER SHUTDOWN (ALS)
A
Bias Current Range
Bias Current While ALS Asserted
Compliance Voltage
Modulation Current Range
Modulation Current While ALS Asserted
Rise Time (20% to 80%)
Fall Time (20% to 80%)
Random Jitter
Deterministic Jitter
Pulse Width Distortion
Differential |S22|
Compliance Voltage
Input Data Rate
Differential Input Swing
Differential |S11|
Input Termination Resistance
BSET Voltage to IBIAS Gain
BSET Input Resistance
MSET Voltage to IMOD Gain
MSET Input Resistance
IBMON to IBIAS Ratio
Accuracy of IBIAS to IBMON Ratio
V
V
I
I
ALS Assert Time
ALS Negate Time
IL
IH
= 25°C, IMOD
IH
IL
MIN
to VCC
3, 4
D
1
= 40 mA, unless otherwise noted.
3, 5
2
2
MAX
3, 4
3, 4
3, 4
, T
A
= −40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
Min
0.6
0.6
10
VCC − 1.1
0.15
−5.0
−4.0
−2.5
−2
2.0
−30
0
10
50
Typ
24
24
0.4
7.2
2
−10
−14
−16.8
100
90
1000
78
1000
10
Rev. A | Page 3 of 16
0.5
Max
100
300
VCC
VCC
80
32.5
32.5
0.9
12
5
VCC + 1.1
11.3
1.6
100
+5.0
+4.0
+2.5
+2
0.8
+30
200
2
10
Unit
mA
μA
V
V
mA diff
mA diff
ps
ps
ps rms
ps p-p
ps
dB
dB
V
Gbps
V p-p diff
dB
Ω
mA/V
Ω
mA/V
Ω
μA/mA
%
%
%
%
V
V
μA
μA
μs
μs
Test Conditions/Comments
ALS = high
IBIAS = 100 mA
IBIAS = 10 mA
R
ALS = high
Includes pulse width distortion
PWD = (|T
5 GHz < f < 10 GHz, Z
f < 5 GHz, Z
NRZ
Differential, ac-coupled
f < 10 GHz, Z
Differential
See Figure 29
10 mA ≤ IBIAS < 20 mA, R
20 mA ≤ IBIAS < 40 mA, R
40 mA ≤ IBIAS < 70 mA, R
70 mA ≤ IBIAS < 100 mA, R
Rising edge of ALS to falling edge of IBIAS and
IMOD below 10% of nominal, see Figure 2
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal, see Figure 2
LOAD
= 5 Ω to 50 Ω differential
HIGH
0
= 50 Ω differential
0
– T
= 100 Ω differential
LOW
|)/2
0
= 50 Ω differential
IBMON
IBMON
IBMON
IBMON
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
ADN2526

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