N02L083WC2AN NANOAMP [NanoAmp Solutions, Inc.], N02L083WC2AN Datasheet - Page 2

• Manufacturer Part Number: N02L083WC2AN
• Description: 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Functional Block Diagram
Functional Description
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1. These parameters are verified in device characterization and are not 100% tested
CE1
Address
Inputs
A
Address
Inputs
A
H
X
L
L
L
0
4
Input Capacitance
I/O Capacitance
- A
- A
CE1
CE2
WE
OE
3
17
Item
CE2
X
H
H
H
L
1
Address
Address
Control
Decode
Decode
WE
Page
Logic
Word
Logic
X
X
H
H
Logic
L
OE
X
H
X
X
L
Symbol
2
C
C
I/O
IN
(DOC# 14-02-015 REV E ECN# 01-0998)
16K Page
x 16 word
x 8 bit
RAM Array
I/O
Data Out
Data In
High Z
High Z
High Z
0
- I/O
V
V
IN
IN
= 0V, f = 1 MHz, T
= 0V, f = 1 MHz, T
7
Test Condition
Standby
Standby
A
A
MODE
Write
Active
Read
= 25
= 25
N02L083WC2A
2
o
o
C
C
1
1
Buffers
Output
Input/
Mux
and
Min
POWER
I/O
Max
Standby
Standby
Active
Active
Active
8
8
0
- I/O
Unit
pF
pF
7
2