TZX11 VISHAY [Vishay Siliconix], TZX11 Datasheet - Page 5

• Manufacturer Part Number: TZX11
• Description: Silicon Epitaxial Planar Z-Diodes
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number 85614
Rev. 2, 01-Apr-99
95 9598
95 9599
95 9600
Figure 3. Typical Change of Working Voltage under
Figure 4. Typical Change of Working Voltage vs.
1000
Figure 5. Temperature Coefficient of Vz vs.
100
1.3
1.2
1.1
1.0
0.9
0.8
10
15
10
–5
1
5
0
–60
Operating Conditions at T
0
0
V
T
Ztn
j
= 25 C
=V
10
T
5
0
Junction Temperature
j
Zt
– Junction Temperature ( C )
/V
V
V
Z
Z–Voltage
(25 C)
Z
Z
10
60
20
– Z-Voltage ( V )
– Z-Voltage ( V )
TK
VZ
I
I
Z
Z
=10 10
=5mA
=5mA
120
30
15
amb
–4
/K
=25 ° C
40
180
20
8 10
6 10
4 10
2 10
–2 10
–4 10
0
–4
–4
–4
–4
–4
–4
/K
/K
/K
/K
240
/K
/K
25
50
95 9601
95 9605
95 9604
0.001
0.01
200
150
100
100
100
0.1
50
10
80
60
40
20
0
1
0
0
0
0
Figure 8. Z–Current vs. Z–Voltage
Figure 6. Diode Capacitance vs.
Figure 7. Forward Current vs.
0.2
4
5
www.vishay.de FaxBack [phone]
V
Forward Voltage
F
T
V
V
j
– Forward Voltage ( V )
Z–Voltage
= 25 C
Z
Z
0.4
10
– Z-Voltage ( V )
– Z-Voltage ( V )
8
Vishay Telefunken
15
0.6
12
P
T
tot
T
amb
V
j
=500mW
= 25 C
R
20
0.8
16
=25 C
= 2V
TZX...
1.0
25
20
5 (7)