BCP28 SIEMENS [Siemens Semiconductor Group], BCP28 Datasheet - Page 2

• Manufacturer Part Number: BCP28
• Description: PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter saturation voltage
I
1)
Semiconductor Group
C
C
E
C
C
C
C
C
C
CB
CB
CB
CB
EB
= 10 A, I
= 1 mA, I
= 100 A, I
= 100 A, V
= 10 mA, V
= 100 mA, V
= 500 mA, V
= 100 mA, I
= 100 mA, I
Pulse test conditions: t 300 s, D 2 %.
A
= 4 V, I
= 30 V, I
= 60 V, I
= 30 V, I
= 60 V, I
= 25 ˚C, unless otherwise specified.
C
B
C
E
E
E
E
= 0
= 0
B
= 0
= 0
= 0
= 0, T
= 0, T
CE
CE
B
B
CE
CE
= 0
= 0.1 mA
= 0.1 mA
1)
= 1 V
= 5 V
= 5 V
= 5 V
A
A
= 150 ˚C
= 150 ˚C
1)
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
2
Symbol
V
V
V
I
I
h
V
V
CB0
EB0
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
min.
30
60
40
80
10
–
–
–
–
–
4000
2000
10000
4000
20000
10000
4000
2000
–
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
max.
–
–
–
–
–
100
100
10
10
100
–
–
–
–
–
–
–
–
1.0
1.5
BCP 28
BCP 48
Unit
V
nA
nA
nA
–
V
A
A