BD110 ETL [E-Tech Electronics LTD], BD110 Datasheet

no-image

BD110

Manufacturer Part Number
BD110
Description
Dual SCHOTTKY Barrier Diodes
Manufacturer
ETL [E-Tech Electronics LTD]
Datasheet
Dual SCHOTTKY Barrier Diodes
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
MAXIMUM RATINGS
DEVICE MARKING
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Thermal Clad is a trademark of the Bergquist Company.
Application circuit designs are moving toward the consolidation of
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
Storage Temperature Range
Forward Power Dissipation
Junction Temperature
MBD110DWT1 = M4
Reverse Voltage
Surface Mount Comparisons:
Space Savings:
T
A
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
Area (mm
Max Package P
Device Count
Package
SOT–363
= 25°C
Rating
2
)
MBD330DWT1 = T4
D
(mW)
1 × SOT–23
SOT–363
MBD330DWT1
MBD770DWT1
MBD110DWT1
40%
120
4.6
2
MBD770DWT1 = H5
2 × SOT–23
SOT–23
70%
225
7.6
1
Symbol
V
P
T
T
J
stg
R
F
–55 to +125
–55 to +150
Value
120
7.0
30
70
MBD110DWT1
MBD330DWT1
MBD770DWT1
Cathode
1
Anode
6
1
CASE 419B–01, STYLE 6
2
Unit
mW
Vdc
3
SOT–363
°C
°C
N/C
N/C
5
2
6
Cathode
Anode
MBD110–1/5
5
4
3
4

Related parts for BD110

BD110 Summary of contents

Page 1

... Space Savings: Package SOT–363 The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. ...

Page 2

... V) MBD770DWT1 R Noise Figure (f = 1.0 GHz, Note 2) MBD110DWT1 Forward Voltage ( mA) MBD110DWT1 1.0 mAdc) MBD330DWT1 mA 1.0 mAdc) MBD770DWT1 mA) F MBD110DWT1 MBD330DWT1 MBD770DWT1 = 25°C unless otherwise noted) A Symbol Min V (BR)R 7 — — — — — — NF — — ...

Page 3

... TYPICAL CHARACTERISTICS — MBD110DWT1 1.0 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0. 100 T , AMBIENT TEMPERATURE (°C) A Figure 1. Reverse Leakage 1.0 0.9 0.8 0.7 0.6 0 1.0 2 REVERSE VOLTAGE (VOLTS) R Figure 3. Capacitance Figure 5. Noise Figure Test Circuit MBD110DWT1 MBD330DWT1 MBD770DWT1 100 10 1.0 0.1 110 120 130 0.3 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage ...

Page 4

... V , REVERSE VOLTAGE (VOLTS) R Figure 6. Total Capacitance 10 1.0 0.1 0.01 0.001 0 6 REVERSE VOLTAGE (VOLTS) R Figure 8. Reverse Leakage MBD110DWT1 MBD330DWT1 MBD770DWT1 500 400 300 200 100 Figure 7. Minority Carrier Lifetime 100 10 1.0 0.1 0.2 0 FORWARD CURRENT (mA ...

Page 5

... V , REVERSE VOLTAGE (VOLTS) R Figure 10 . Total Capacitance 10 1.0 0.1 0.01 0.001 REVERSE VOLTAGE (VOLTS) R Figure 12. Reverse Leakage MBD110DWT1 MBD330DWT1 MBD770DWT1 500 400 300 200 100 Figure 11. Minority Carrier Lifetime 100 10 1.0 0.1 0.2 0 ...

Related keywords