il2-x006 Vishay, il2-x006 Datasheet - Page 2

• Manufacturer Part Number: il2-x006
• Description: Optocoupler, Phototransistor Output, With Base Connection
• Manufacturer: Vishay

IL1/IL2/IL5
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector current
Power dissipation
Derate linearly from 25 °C
COUPLER
Package power dissipation
Derate linearly from 25 °C
Isolation test voltage (between emitter
and detector referred to standard climate
23 °C/50 % RH, DIN 50014)
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
V
V
2.0 mm from case bottom
Optocoupler, Phototransistor Output,
V
V
V
IO
I
V
IO
CE
V
V
V
CE
CB
EB
CE
CE
CE
TEST CONDITION
= 500 V, T
TEST CONDITION
R
= 500 V, T
(1)
= 1.0 mA, I
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
= 0.4 V, I
= 10 V, I
= 10 V, I
V
I
I
V
t < 1.0 ms
F
R
CE
R
= 60 mA
= 10 µA
= 6.0 V
with Base Connection
= 10 V
amb
amb
B
B
B
B
= 20 µA
= 20 µA
= 20 µA
= 20 µA
= 100 °C
= 25 °C
SYMBOL
V
h
I
C
C
PART
V
R
C
V
R
h
C
CEO
CEsat
FEsat
V
I
IL1
IL2
IL5
BR
R
CE
CB
EB
BE
FE
thjl
thjl
O
F
MIN.
200
120
6.0
SYMBOL
BV
BV
BV
BV
BV
T
P
V
CTI
T
P
R
R
T
I
I
amb
T
diss
ISO
CEO
CEO
CEO
CBO
stg
sld
EBO
C
C
tot
IO
IO
j
TYP.
1.25
0.01
0.25
0.65
750
650
400
500
6.8
8.5
5.0
30
40
11
- 40 to + 150
- 40 to + 100
VALUE
≥ 10
≥ 10
5300
≥ 7.0
≥ 7.0
400
200
250
175
100
260
7.0
2.6
3.3
50
70
70
70
50
Document Number: 83612
12
11
MAX.
1800
1.65
600
10
50
Rev. 1.5, 07-Dec-07
mW/°C
mW/°C
UNIT
V
mW
mW
mm
mm
mA
mA
°C
°C
°C
°C
RMS
V
V
V
V
V
Ω
Ω
UNIT
K/W
K/W
µA
pF
pF
pF
pF
nA
V
V
V
V