ra13h3340m Quanzhou Jinmei Electronic Co.,Ltd., ra13h3340m Datasheet - Page 4

• Manufacturer Part Number: ra13h3340m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA13H3340M
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
OUTPUT POWER and DRAIN CURRENT
5
0
OUTPUT POWER and DRAIN CURRENT
5
0
OUTPUT POWER and DRAIN CURRENT
5
0
2.5
2.5
2
f=400MHz,
V
P
f=330MHz,
V
P
f=400MHz,
V
P
GG
in
DD
in
DD
in
=50mW
=50mW
=50mW
=5V,
4
=12.5V,
=12.5V,
3
3
DRAIN VOLTAGE V
GATE VOLTAGE V
GATE VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
6
3.5
3.5
8
4
4
ELECTROSTATIC SENSITIVE DEVICE
(T
10
OBSERVE HANDLING PRECAUTIONS
case
4.5
4.5
GG
GG
DD
=+25°C, Z
12
(V)
(V)
(V)
P
out
P
P
out
5
5
14
out
I
DD
I
I
DD
DD
5.5
5.5
G
16
MITSUBISHI ELECTRIC
=Z
6
5
4
3
2
1
0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
L
=50Ω, unless otherwise specified)
4/8
OUTPUT POWER and DRAIN CURRENT
30
25
20
15
10
5
0
2.5
f=365MHz,
V
P
DD
in
RoHS COMPLIANCE
=50mW
=12.5V,
3
versus GATE VOLTAGE
GATE VOLTAGE V
3.5
4
4.5
GG
MITSUBISHI RF POWER MODULE
(V)
RA13H3340M
P
out
5
I
DD
5.5
6
5
4
3
2
1
0
24 Jan 2006