ra03m9595m Quanzhou Jinmei Electronic Co.,Ltd., ra03m9595m Datasheet - Page 3

• Manufacturer Part Number: ra03m9595m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA03M9595M
7
6
5
4
3
2
1
0
10
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
1.5
5
0
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
940
-15
f=953MHz
V
V
f=953MHz
Pin=50mW
V
DD
GG
V
V
P
DD
DD
GG
in
=8.0V
=3.5V
=8.0V
-10
=50mW
=8.0V
=3.5V
2.0
GATE VOLTAGE V
INPUT POWER P
945
versus GATE VOLTAGE
FREQUENCY f(MHz)
-5
2.5
0
ELECTROSTATIC SENSITIVE DEVICE
950
(T
η
P
OBSERVE HANDLING PRECAUTIONS
ρ
I
case
OUT
DD
3.0
T
5
P
Gp
IN
IN
out
GG
=+25deg.C, Z
(dBm)
(V)
10
955
3.5
P
OUT
15
I
DD
MITSUBISHI ELECTRIC
4.0
960
20
G
=Z
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
45
40
35
30
25
20
15
10
5
0
L
=50Ω, unless otherwise specified)
3/7
-20
-25
-30
-35
-40
-45
-50
-55
-60
8
7
6
5
4
3
2
1
0
2
OUTPUT POWER and DRAIN CURRENT
nd
940
0
, 3
f=953MHz
Pin=50mW
V
RoHS COMPLIANT
rd
GG
V
V
P
DD
GG
in
=3.5V
2
HARMONICS versus FREQUENCY
=50mW
nd
=8.0V
=3.5V
2
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
945
FREQUENCY f (MHz)
4
950
MITSUBISHI RF POWER MODULE
6
RA03M9595M
3
DD
rd
(V)
P
955
out
8
I
DD
10
960
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 Jun 2007