mjd41crl ON Semiconductor, mjd41crl Datasheet - Page 4

• Manufacturer Part Number: mjd41crl
• Description: Complementary Power Transistors
• Manufacturer: ON Semiconductor

0.05
0.03
0.01
0.5
0.3
0.1
10
5
3
2
1
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
1
1.6
1.2
0.8
0.4
1
0.01
2
0
10
T
T
C
J
0.02
SINGLE PULSE
CURVES APPLY BELOW RATED V
= 150°C
= 25°C SINGLE PULSE
D = 0.5
V
Figure 10. Maximum Forward Bias
0.02
0.05
2
0.2
0.1
CE
I
C
Figure 7. Collector Saturation Region
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= 1 A
20
0.03
3
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
Safe Operating Area
0.05
0.01
5
dc
I
B
50
, BASE CURRENT (mA)
7
0.1
10
2.5 A
100
0.2
CEO
5 ms
20
500 ms
MJD41C, 42C
0.3
MJD41C (NPN) MJD42C (PNP)
200
30
300
0.5
5 A
50
T
Figure 9. Thermal Response
100 ms
J
500
= 25°C
http://onsemi.com
1 ms
70
1
100
1000
2
t, TIME (ms)
4
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
J(pk)
300
200
100
qJC(t)
qJC
There are two limitations on the power handling ability of
The data of Figure 10 is based on T
70
50
30
5
0.5
= 6.25°C/W MAX
− T
v 150_C. T
= r(t) R
C
= P
10
qJC
(pk)
1
1
q
JC(t)
20
V
J(pk)
R
Figure 8. Capacitance
, REVERSE VOLTAGE (VOLTS)
C
C
2
30
ib
ob
may be calculated from the data in
3
50
P
(pk)
5
DUTY CYCLE, D = t
100
t
1
10
t
J(pk)
2
200
= 150_C; T
300
T
20
J
1
= 25°C
/t
500
2
C
30
− V
1000
C
CE
50
is