M74VHC1G135DFT1G ON Semiconductor, M74VHC1G135DFT1G Datasheet - Page 2
![IC GATE NAND SGL SCHMITT SOT-353](/photos/5/32/53258/7sz_sot___353_419a___02_sml.jpg)
M74VHC1G135DFT1G
Manufacturer Part Number
M74VHC1G135DFT1G
Description
IC GATE NAND SGL SCHMITT SOT-353
Manufacturer
ON Semiconductor
Series
74VHCr
Datasheet
1.M74VHC1G135DTT1G.pdf
(6 pages)
Specifications of M74VHC1G135DFT1G
Logic Type
NAND Gate - Schmitt Trigger
Number Of Inputs
2
Number Of Circuits
1
Current - Output High, Low
8mA, 8mA
Voltage - Supply
2 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M74VHC1G135DFT1G
Manufacturer:
ON Semiconductor
Quantity:
4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Temperature °C
Latchup
V
V
V
MSL
I
V
V
t
T
V
I
I
q
V
OUT
P
F
r
OUT
I
T
T
ESD
OUT
T
OK
CC
stg
CC
IK
JA
CC
, t
IN
IN
R
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 secs
Junction temperature under bias
Storage temperature
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Time, Years
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
http://onsemi.com
CC
and Below GND at 125°C (Note 4)
Charged Device Model (Note 3)
Human Body Model (Note 1)
2
V
OUT
Machine Model (Note 2)
Oxygen Index: 28 to 34
Figure 3. Failure Rate vs. Time Junction Temperature
< GND; V
V
V
SC−88A, TSOP−5
CC
CC
SC−88A, TSOP−5
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
> V
CC
10
TIME, YEARS
UL 94 V−0 @ 0.125 in
Min
−55
2.0
0.0
0.0
0
0
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
Level 1
> 2000
Value
> 200
+150
±500
−20
+20
+25
+50
200
333
260
N/A
No limit
No limit
100
+125
Max
5.5
5.5
7.0
1000
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V