M74VHC1GT08DFT2G ON Semiconductor, M74VHC1GT08DFT2G Datasheet - Page 2

IC GATE AND SGL TTL 2IN SOT353

M74VHC1GT08DFT2G

Manufacturer Part Number
M74VHC1GT08DFT2G
Description
IC GATE AND SGL TTL 2IN SOT353
Manufacturer
ON Semiconductor
Series
74VHCr
Datasheet

Specifications of M74VHC1GT08DFT2G

Logic Type
AND Gate
Number Of Inputs
2
Number Of Circuits
1
Current - Output High, Low
8mA, 8mA
Voltage - Supply
3 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M74VHC1GT08DFT2GOS
MC74VHC1GT08DFT2G
MC74VHC1GT08DFT2GOS
MC74VHC1GT08DFT2GOS

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Manufacturer
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Temperature °C
Latchup
V
V
V
I
V
V
t
T
V
I
I
q
V
OUT
r
P
OUT
I
T
T
ESD
OUT
T
OK
CC
CC
IK
stg
CC
JA
, t
IN
IN
A
D
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Above V
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
CC
MC74VHC1GT08
and Below GND at 125°C (Note 4)
http://onsemi.com
Charged Device Model (Note 3)
Human Body Model (Note 1)
V
OUT
Machine Model (Note 2)
2
< GND; V
V
V
Figure 3. Failure Rate vs. Time Junction Temperature
SC−88A, TSOP−5
CC
CC
High or Low State
High or Low State
SC−88A, TSOP−5
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
1
V
V
CC
CC
> V
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
= 0
= 0
CC
10
Min
−55
3.0
0.0
0.0
0.0
0
0
−0.5 to V
TIME, YEARS
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 200
+150
±500
−20
+20
+25
+50
200
333
260
N/A
CC
+ 0.5
+125
Max
V
100
5.5
5.5
5.5
20
100
CC
°C/W
Unit
Unit
ns/V
mW
1000
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V

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