SFM12-L FORMOSA [Formosa MS], SFM12-L Datasheet - Page 2

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SFM12-L

Manufacturer Part Number
SFM12-L
Description
Chip Silicon Rectifier - Super fast recovery type
Manufacturer
FORMOSA [Formosa MS]
Datasheet
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
50
NONINDUCTIVE
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
.001
(+)
25Vdc
(approx.)
( )
W
1.0
.01
10
.1
.4
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.1-TYPICAL FORWARD
RECOVERY TIME CHARACTERISTICS
-0.25A
+0.5A
-1.0A
.6
0
D.U.T.
1
NON-
INDUCTIVE
W
FORWARD VOLT AGE,(V)
CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES (SFM11-L THRU SFM16-L)
.8
10
NONINDUCTIVE
W
trr
1.0
1cm
OSCILLISCOPE
|
|
|
|
|
|
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SET TIME BASE FOR
1.2
(NOTE 1)
50 / 10ns / cm
Pulse Width 300us
1% Duty Cycle
1.4
Tj=25 C
1.6
GENERATOR
(NOTE 2)
PULSE
1.8
( )
(+)
30
24
18
12
70
60
50
40
30
20
10
6
0
0
.01
1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05
1.2
1.0
0.8
0.6
0.4
0.2
.1
0
0
FIG.2-TYPICAL FORWARD CURRENT
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
SURGE CURRENT
5
25
AMBIENT TEMPERATURE ( C)
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
.5
DERATING CURVE
50
10
1
Tj=25 C
75
5
100
10
8.3ms Single Half
Sine Wave
JEDEC method
125
50
150
50
100
175
100

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