ktc3770 Korea Electronics (KEC GROUP), ktc3770 Datasheet

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ktc3770

Manufacturer Part Number
ktc3770
Description
Epitaxial Planar Transistor Vhf/uhf Wide Band Amplifier
Manufacturer
Korea Electronics (KEC GROUP)
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ktc3770T-B2-RTK/P
Manufacturer:
KEC
Quantity:
18 000
Part Number:
ktc3770U-B-RTK/P
Manufacturer:
KEC
Quantity:
20 000
2003. 2. 12
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : h
Note 2 : C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
Low Noise Figure, High Gain.
NF=1.1dB, |S
CHARACTERISTIC
FE
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC
Classification
21e
|
2
=11dB (f=1GHz).
A:50~100, B:80~160, C:125~250.
Revision No : 1
SEMICONDUCTOR
TECHNICAL DATA
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
stg
C
C
j
h
SYMBOL
FE
|S
I
I
(Note1)
C
NF
CBO
C
EBO
f
21e
T
RATING
-55 150
ob
re
|
2
100
150
150
20
12
3
V
V
V
V
V
V
V
CB
EB
CE
CB
CE
CE
CE
UNIT
mW
=1V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
mA
V
V
V
TEST CONDITION
C
=0
C
C
C
C
E
E
=0
=20mA
=0, f=1MHz (Note2)
=20mA
=20mA, f=1GHz
=7mA, f=1GHz
EPITAXIAL PLANAR NPN TRANSISTOR
Type Name
Marking
h
L
FE
2
1
MIN.
1. EMITTER
2. BASE
3. COLLECTOR
P
7.5
50
Rank
5
KTC3770S
-
-
-
-
-
E
B
SOT-23
M
R
P
3
L
TYP.
0.65
11.5
1.1
7
-
-
-
-
DIM
M
A
B
C
D
E
G
H
K
L
N
J
P
MAX.
1.15
250
1.0
1
1
2
-
-
MILLIMETERS
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
0.13+0.10/-0.05
1.00+0.20/-0.10
Lot No.
0.00 ~ 0.10
1.30 MAX
2.93 0.20
0.20 MIN
1.90
0.95
0.55
+ _
7
UNIT
GHz
dB
dB
pF
pF
A
A
1/5

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ktc3770 Summary of contents

Page 1

... =10V, I =0, f=1MHz (Note2 =10V, I =20mA =10V, I =20mA, f=1GHz 2 21e =10V, I =7mA, f=1GHz KTC3770S EPITAXIAL PLANAR NPN TRANSISTOR DIM MILLIMETERS A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 0.45+0.15/-0.05 E 2.40+0.30/-0. 0.13+0.10/-0.05 K 0. 0.20 MIN N 1.00+0.20/-0.10 ...

Page 2

... AMBIENT TEMPERATURE 500 300 100 0 COLLECTOR CURRENT =10V COLLECTOR CURRENT I 2003 Revision KTC3770S 100 125 150 C V =10V 100 (mA 100 (mA ...

Page 3

... Revision KTC3770S C V =10V CE f=1.0GHz 10 30 100 (mA 10.616 129.3 6.856 104.4 4.852 90.9 3 ...

Page 4

... S 21e V =10V CE I =5mA C 90 Ta=25 C 0.25 120 0.20 0.15 150 0.10 0. 180 0 -150 -120 -90 2003 Revision KTC3770S V I =5mA Ta=25 C j100 j150 150 j250 100 250 + _ 180 10 -j250 -j150 -150 -j100 V I =5mA Ta=25 C (UNIT : Ω) 60 2.0 1.6 30 1.2 j10 0.8 0.4 f=0.2GHz 0 0 0.05 0.10 ...

Page 5

... S 21e V =10V CE I =20mA C 90 Ta=25 C 0.25 120 0.20 0.15 150 0.10 0. 180 0 -150 -120 -90 2003 Revision KTC3770S j100 j150 j250 100 250 + _ 180 -j250 -j150 -j100 60 2.0 1.6 1.2 30 0.8 j10 0.4 f=0.2GHz 0 0 0.05 0.10 0.15 0.20 0.25 -j10 -30 -60 S 12e V =10V CE I =20mA C ...

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