k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 13

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k9k8g08u0m-p

Manufacturer Part Number
k9k8g08u0m-p
Description
4g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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AC TEST CONDITION
(K9XXG08UXM-XCB0: T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
VALID BLOCK
NOTE :
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
3. The number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations.
* : Each K9K8G08U0M chip in the K9WAG08U1M and K9NBG08U5M has Maximun 160 invalid blocks.
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
Input/Output Capacitance
Input Capacitance
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-
gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
CLE
H
H
X
X
X
X
X
K9WAG08U1M-IXB0’s capacitance(I/O, Input) is 20pF.
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
K9WAG08U1M
K9NBG08U5M
K9K8G08U0M
Parameter
Item
ALE
IL
X
H
H
X
X
X
X
L
L
L
L
or V
(1)
(
Parameter
T
A
IH.
A
=25°C, V
=0 to 70°C, K9XXG08UXM-XIB0:T
Symbol
CE
C
C
H
L
L
L
L
L
L
X
X
X
X
I/O
CC
IN
=3.3V, f=1.0MHz)
Symbol
N
N
N
Condition
VB
VB
VB
V
V
Test
IN
IL
WE
=0V
=0V
H
X
X
X
X
X
Min
-
-
16,064*
32,128*
A
8,032
=-40 to 85°C ,K9XXG08UXM: Vcc=2.7V~3.6V unless otherwise noted)
RE
Min
H
H
H
H
H
H
X
X
X
X
13
1 TTL GATE and CL=50pF (K9K8G08U0M-Y,P/K9WAG08U1M-I)
1 TTL GATE and CL=30pF (K9WAG08U1M-Y,P)
1 TTL GATE and CL=30pF (K9NBG08U5M-P)
K9K8G08U0M
0V/V
20
20
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
Typ.
-
-
Read Mode
Data Input
Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Write Mode
K9XXG08UXM
K9WAG08U1M*
0V to Vcc
Vcc/2
5ns
Max
40
40
FLASH MEMORY
16,384*
32,768*
Command Input
Address Input(5clock)
Command Input
Address Input(5clock)
8,192
Max
Mode
K9NBG08U5M
80
80
Blocks
Blocks
Unit
Unit
pF
pF

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